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Vishay N-Channel Enhancement MOSFET 7.7 A 60 V 3-Pin TO-252 IRLR014TRPBF
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | IRLR014TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IRLR |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 7.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 1.6V |
Key Features
- High continuous drain current rating of 7.7 A.
- Maximum drain-source voltage of 60 V for reliable operation.
- Enhancement mode N-Channel semiconductor device.
- Compact 3-pin TO-252 surface mount package.
- Power dissipation rating of 25 W for thermal stability.
- Low maximum drain-source resistance of 280 mΩ.
- Typical gate charge of 8.4 nC ensures fast switching.
- Wide operating temperature from -55°C to 150°C.
Product Description
Vishay IRLR014TRPBF is a type N-channel enhancement mode power MOSFET designed for efficient switching applications. It supports a maximum continuous drain current of 7.7 amperes and a maximum drain-source voltage of 60 volts. Packaged in a TO-252 3-pin surface mount package, this MOSFET is suitable for compact electronic devices requiring robust power handling.
The device features a low maximum drain-source resistance of 280 milliohms, contributing to lower conduction losses and improved efficiency. Its typical gate charge of 8.4 nanocoulombs enables fast switching, making it ideal for power management in industrial, automotive, and consumer electronic circuits.
Operating temperature range from -55°C to 150°C makes it viable for demanding environments including industrial and automotive applications. The device's power dissipation rating of 25 watts ensures reliable thermal performance.
Its compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height enable easy integration onto printed circuit boards. High continuous drain current rating of 7.7 A. Maximum drain-source voltage of 60 V. Enhancement mode N-Channel MOSFET.
3-pin TO-252 surface mount package. Power dissipation up to 25 W. Maximum drain-source resistance 280 mΩ. Typical gate charge 8.4 nC. Wide temperature range from -55°C to 150°C. Forward voltage of 1.6 V and max gate-source voltage of 10 V.
This Vishay MOSFET is widely used in power conversion, motor control, and switching regulator circuits within industrial, automotive, and electronic manufacturing sectors. Reliable performance and efficient power handling improve overall system efficiency and thermal management.
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Frequently Asked Questions
The maximum continuous drain current rating of this MOSFET is 7.7 A.
The maximum drain-source voltage for this model is 60 V.
It has a power dissipation rating of 25 W.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
The typical gate charge for this model is 8.4 nC.
The maximum drain-source resistance is 280 mΩ.
The operating temperature range is from -55°C to 150°C.
This MOSFET features an enhancement mode N-channel.
The maximum gate-source voltage is 10 V.
This model is suitable for power conversion, motor control, and switching regulator circuits in industrial, automotive, and electronic manufacturing sectors.
The TO-252 package has 3 pins.
The country of origin for this MOSFET is Malaysia.
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