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Vishay IRFI Type N-Channel MOSFET 4 A 200 V Enhancement 3-Pin TO-220 IRFI620GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 29.27mm |
| Length | 10.3mm |
| Model | IRFI620GPBF |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 1.8V |
Key Features
- Packaged in a TO-220 3-pin form factor for through-hole mounting.
- Features an enhancement channel mode with low drain-source resistance of 1 ohm.
- Maximum power dissipation of 30 W suitable for medium power applications.
- Operating temperature range from -55°C to 150°C for reliable performance.
- Typical gate charge of 16 nC and maximum gate-source voltage of 10 V.
- Forward voltage rated at 1.8 V for efficient conduction.
- Physical dimensions include height 29.27 mm, width 4.8 mm, and length 10.3 mm.
- Manufactured in China complying with standard non-automotive specifications.
Product Description
Vishay IRFI620GPBF is a high-performance N-channel MOSFET transistor designed for reliable switching and amplification in electronic circuits. This device supports a maximum continuous drain current of 4 A and can withstand drain-source voltages up to 200 V, making it suitable for mid-range power electronics.
The TO-220 package with 3 pins enables easy through-hole mounting and effective heat dissipation associated with a maximum power dissipation of 30 W. Its enhancement mode channel provides low on-resistance of 1 ohm ensuring efficient conduction and thermal management across operating temperatures from -55°C to 150°C.
The typical gate charge of 16 nC at rated gate voltage and the maximum forward voltage of 1.8 V supports fast switching capabilities with minimized losses.
Its compact physical dimensions (height 29.27 mm, width 4.8 mm, length 10.3 mm) and standard compliance make it ideal for use in industrial, electronic component assemblies, power conversion, and control systems.
Packaged in TO-220 with 3-pin configuration for convenient integration. Supports maximum 4 A drain current and 200 V drain-source voltage ratings. Low on-resistance of 1 ohm enhances performance efficiency. Thermal tolerance across wide temperature range from -55°C to 150°C.
Optimized gate charge and gate voltage parameters for switching circuits. Forward voltage characteristic reduces power loss during conduction. Manufactured in China under Vishay Semiconductor standards.
This MOSFET is widely used in power electronics, industrial control systems, and electronic semiconductor assemblies. It is an essential component for engineers and technicians designing medium power circuits requiring reliable switching characteristics.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 4 A.
This model can withstand a maximum drain-source voltage of 200 V.
The maximum power dissipation capacity is 30 W, making it suitable for medium power applications.
The dimensions are height 29.27 mm, width 4.8 mm, and length 10.3 mm.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 16 nC at the rated gate voltage.
The maximum gate-source voltage is 10 V.
It is packaged in a TO-220 3-pin form factor for through-hole mounting.
This model features an N-channel type configuration.
The forward voltage is rated at 1.8 V for efficient conduction.
The maximum drain-source resistance is 1 ohm, which enhances performance efficiency.
It is manufactured in China, complying with standard non-automotive specifications.
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