onsemi PowerTrench Type N-Channel MOSFET, 92 A, 150 V, Enhancement Mode, 3-Pin TO-263 Package FDB110N15A

onsemi FDB110N15A PowerTrench Type N-Channel MOSFET is engineered for high current and voltage power switching applications requiring efficient, reliable performance. It features a 92 Ampere maximum continuous drain current and 150 Volt drain-source voltage rating, making it suitable for demanding power management scenarios in industrial electronics.

This MOSFET employs an enhancement mode channel operation and is housed in a compact 3-pin TO-263 surface mount package, allowing for easy PCB mounting and efficient heat dissipation. Its low on-resistance of 11 milliohms ensures minimal conduction losses enhancing system efficiency.

The device supports operation over a temperature range from -55°C to 175°C, providing robustness in extreme thermal conditions typical of automotive, industrial, and power conversion equipment. A maximum power dissipation of 234 Watts further underscores its capability to handle high power loads.

The gate charge value of 47 nanocoulombs facilitates quick switching, improving the overall switching efficiency of the electronic circuits. Additionally, the forward voltage of 1.25 Volts supports effective on-state conduction.

This power MOSFET finds applications in industrial power supplies, motor drives, next-generation power management systems, and other high-performance electronic circuits requiring reliable discrete semiconductor components.

High maximum continuous drain current of 92 Amperes for demanding power applications. Voltage rating of 150 Volts ensuring robust operation under high voltage stress. Enhancement mode channel type provides reliable switching control.

Compact 3-pin TO-263 surface mount package for efficient PCB integration. Low drain-source on-resistance of 11 milliohms minimizes conduction losses. Maximum power dissipation capability of 234 Watts for thermal reliability.

Wide operating temperature range from -55°C to 175°C for harsh environments. Typical gate charge of 47 nanocoulombs supports fast switching speeds. Forward voltage of 1.25 Volts for efficient conduction during on-state. Designed to meet industrial quality standards though without specific certifications.

Explore a wide range of semiconductors and discrete MOSFETs on EnvMart for varied industrial, automotive, and electronic design applications.