onsemi Isolated PowerTrench Dual Type P and Type N-Channel MOSFET, 6.4 A, 30 V, 8-Pin SOIC FDS8958B

onsemi FDS8958B is an isolated PowerTrench Dual Type P and Type N-Channel MOSFET designed for high efficiency and power density in electronic circuits. It supports a maximum continuous drain current of 6.4 A and can withstand drain-source voltages up to 30 V, making it suitable for a wide range of power switching applications.

This MOSFET utilizes an enhancement mode with low on-resistance of 80 milliohms, enabling reduced power losses and improved thermal management. Its soft reverse recovery body diode enhances switching performance, eliminating the need for snubber circuits and enabling higher frequency synchronous rectification.

The device features a shielded-gate design to achieve excellent charge balance and a notable figure of merit (FOM) compared to previous generations of MOSFETs. It comes in an 8-pin SOIC surface-mount package measuring 4.9 mm x 3.9 mm x 1.575 mm, ideal for space-constrained electronics.

Thermal operating range is broad, from -55°C to 150°C, supporting robust operation in industrial, automotive, and commercial environments. Its maximum power dissipation rating is 2 watts, reflecting its capacity to manage heat effectively under typical load conditions.

With two elements per chip, it allows integrated dual-channel switching capability, beneficial for power management and driver circuits.

This MOSFET’s key attributes make it highly applicable in power supply design, industrial controls, automotive electronics, and other semiconductor-based switching systems where efficient power control is critical.

This device features an enhancement channel mode with a low maximum drain-source resistance of 80 milliohms. It has a maximum power dissipation rating of 2 watts for reliable thermal performance. The MOSFET supports a soft reverse recovery body diode for fast switching in synchronous rectification applications.

Built with shielded-gate technology, it offers improved figure of merit (FOM) and charge balance performance. Designed for surface mount applications, it operates safely within -55°C to 150°C temperature range. The device is isolated and contains two elements per chip for dual-channel operation.

It features a typical gate charge (Qg) of 12 nC at a gate-source voltage of 12 V and a maximum gate-source voltage of 25 V. The compact SOIC package measures 4.9 mm in length, 3.9 mm in width, and 1.575 mm in height. Explore the onsemi MOSFET range and other discrete semiconductors on EnvMart for industrial, electronic, power supply design, and automotive applications.