Vishay Isolated TrenchFET Dual Type P and N-Channel MOSFET, 8 A Continuous Drain Current, 40 V Drain Source SI4554DY-T1-GE3

Vishay SI4554DY-T1-GE3 is a dual isolated TrenchFET MOSFET device integrating both P-channel and N-channel transistor elements. Designed for power switching and amplification, this MOSFET operates with a continuous drain current of 8 A and a maximum drain-source voltage of 40 V, making it ideal for low-voltage power management circuits in industrial and consumer electronics.

The device comes in a compact 8-pin SOIC surface mount package, facilitating high-density PCB layouts with efficient thermal dissipation and electrical performance. Its enhancement mode channel provides reliable switching, supported by a typical gate charge of 13.3 nC and a gate-source voltage limit of 20 V for durable gate operation protection.

With a maximum power dissipation rating of 3.2 W and an operating temperature range from -55°C to 150°C, the SI4554DY-T1-GE3 MOSFET is suitable for demanding environments including automotive electronics, industrial machinery control, and power supplies. Its isolated transistor configuration and precise manufacturing ensure stable and efficient performance in discrete semiconductor applications.

The package measures just 5 mm in length, 4 mm in width, and 1.5 mm in height, enabling compact system designs without compromising power handling capabilities. The device is RoHS compliant and manufactured under strict quality standards.

Supports dual isolated Type P and Type N channels for versatile switching applications. Has a maximum continuous drain current of 8 amperes. Maximum drain-source voltage rating of 40 volts for reliable operation in low voltage circuits.

Packaged in a space-saving 8-pin SOIC surface-mount housing. Features an enhancement mode channel for stable transistor configuration. Maximum power dissipation of 3.2 watts to handle moderate loads safely. Operates in a wide temperature range from -55°C to 150°C for robust performance.

Typical gate charge of 13.3 nanocoulombs ensures efficient switching. Maximum gate-source voltage of 20 volts for gate protection. Compact dimensions: length 5 mm, width 4 mm, and height 1.5 mm.

This MOSFET is a key component for electronic engineers working on power electronics, embedded systems, and semiconductor-based power management solutions. Its reliable performance makes it suitable for laboratory, industrial manufacturing, and commercial electronic device production.

Discover this product along with a wide range of high-quality Vishay semiconductor components in the EnvMart Electronics & Electricals catalog.