onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 2.5 A 30 V Enhancement 6-Pin SOT-23 FDC6561AN

onsemi FDC6561AN Isolated PowerTrench 2 Type N-Channel MOSFET is a high-efficiency semiconductor designed for power switching applications requiring up to 2.5 A continuous drain current and a drain-source voltage of 30 V. This 6-pin SOT-23 package device comes with an isolated transistor configuration, enabling versatile usage in AC/DC power supplies and synchronous rectification systems.

The MOSFET features an enhancement mode Type N channel with a low maximum drain source resistance of 152 milliohms, facilitating efficient conduction with minimal power loss. The device supports a wide operating temperature range from -55°C up to 150°C, making it suitable for industrial, automotive (non-standard), and commercial electronics applications.

It has a maximum power dissipation of 960 mW and a typical gate charge of 2.3 nC at Vgs, allowing for fast and reliable switching performance. The maximum gate-source voltage rating is 20 V, ensuring robust protection during transient conditions. The integrated PowerTrench technology incorporates a soft reverse recovery body diode, which helps eliminate snubber circuits or allows replacement of higher voltage rating MOSFETs, thus improving system efficiency.

The compact form factor with dimensions of approximately 1 mm height, 3 mm length, and 1.7 mm width optimizes PCB space without compromising performance. The device includes two elements per chip as part of its dual MOSFET design within the package, tailored for advanced power management solutions.

Features isolated dual N-channel enhancement mode configuration. Low maximum drain source resistance of 152 mΩ ensures efficient conduction. Operates reliably from -55°C to 150°C ambient temperatures. Maximum power dissipation of 960 mW suitable for moderate power applications.

Soft reverse recovery body diode reduces switching losses and improves efficiency. Compact 6-pin SOT-23 surface mount package fits small PCB footprints. Typical gate charge of 2.3 nC allows fast switching performance.

This MOSFET is ideal for industrial automation, power supplies, consumer electronics, and HVAC systems requiring compact, reliable, and efficient switching components. Explore our full range of semiconductor solutions on EnvMart for optimized industrial and commercial electronics applications.