onsemi PowerTrench Type N-Channel MOSFET, 7 A Current, 100 V Voltage, Surface Mount SOIC 8-Pin FDS86141

onsemi FDS86141 PowerTrench Type N-Channel MOSFET is a high-performance semiconductor device designed to deliver efficient power switching with a maximum continuous drain current of 7 A and a drain source voltage of 100 V. The device features PowerTrench technology, optimized for low resistance and enhanced switching performance, making it suitable for a variety of industrial, commercial, and electronic applications.

Encased in a compact 8-Pin SOIC surface mount package measuring 4 mm in length, 5 mm in width, and 1.5 mm in height, the MOSFET facilitates easy integration on densely packed circuit boards. Its maximum drain source resistance of only 40 milliohms reduces conduction losses, improving overall system efficiency. The enhancement mode channel ensures reliable and precise switching behavior.

The operating temperature range from -55°C to 150°C equips this MOSFET to perform reliably under harsh or variable thermal conditions, essential for industrial machinery, power supplies, automotive electronics, and other demanding environments. The typical gate charge of 11.8 nC at Vgs accelerates switching times, contributing to energy savings and signal integrity.

Maximum power dissipation capacity of 5 W supports prolonged operation without overheating. Additional technical characteristics include a gate source voltage limit of 20 V and forward voltage of 0.8 V, which are critical for design engineers to ensure proper system compatibility and safety.

This device finds use in power management circuits, switching regulators, motor drives, and other high-efficiency pathways in semiconductor and electronic component systems. Its surface mount capability supports modern PCB manufacturing processes and miniaturization trends.

Features PowerTrench technology for improved performance. Delivered in a surface mount 8-Pin SOIC package. Maximum continuous drain current of 7 A supports powerful applications. Low maximum drain source resistance of 40 milliohms minimizes conduction losses.

Enhancement mode channel operation provides efficient switching. Operating temperature range from -55°C to 150°C for reliable performance. Typical gate charge of 11.8 nC ensures fast switching speed. Maximum power dissipation rating of 5 W enables durability in demanding environments.

Compact dimensions with 4 mm length, 5 mm width, and 1.5 mm height. Designed for surface mount applications in power electronics and semiconductor circuits. Explore more semiconductor and MOSFET products in EnvMart’s Electronics & Electricals category for industrial, laboratory, automotive, and commercial technical applications.