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STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 STF11NM80
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STF11NM80 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 43.6nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 860mV |
Key Features
- The device features MDmesh™ technology ensuring low conduction losses.
- It operates with an enhancement mode and has a maximum power dissipation of 35 W.
- The maximum continuous drain current is 11 A and maximum drain source voltage is 800 V.
- Typical gate charge is 43.6 nC at Vgs.
- Maximum gate source voltage ranges from -30 V to +30 V, suitable for robust switching control.
- Designed for through-hole mounting in TO-220 package with 3 pins for easy integration.
- Operation temperature range spans from -65°C to a maximum of 150°C to support industrial environments.
- Forward voltage is 860 mV enabling efficient power handling.
Product Description
STMicroelectronics STF11NM80 is an N-Channel MDmesh™ MOSFET designed for robust power switching and amplification applications in industrial electronics.
Featuring a maximum continuous drain current of 11 A and a maximum drain-source voltage of 800 V, it provides efficient and reliable performance. The device operates in enhancement mode and comes in a through-hole TO-220 package with 3 pins, allowing easy assembly on printed circuit boards.
This MOSFET utilizes advanced MDmesh technology for reduced conduction losses and improved switching performance. It supports a wide operating temperature range from -65°C to 150°C, making it suitable for demanding environments such as industrial machinery, power supplies, switching regulators, and automated controls.
The MDmesh structure offers excellent thermal and electrical performance. Maximum power dissipation of 35 W supports medium power applications. Gate charge of 43.6 nC allows fast switching with reduced gate drive power. Robust gate-source voltage range (-30 V to +30 V) protects the device from gate overstress.
Compact TO-220 form factor simplifies heat sinking and mechanical mounting.
This component is ideal for power management designs in industrial, construction, and electronic manufacturing sectors where efficient switching and thermal reliability are critical.
The product is new, sourced from STMicroelectronics, and follows standard packaging for seamless integration into production lines. Explore a wide range of semiconductor devices and power components in the Electronics & Electricals category at EnvMart for your industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
The maximum drain-source voltage is 800 V.
The typical gate charge is 43.6 nC at Vgs.
It has a maximum power dissipation of 35 W.
The operating temperature range spans from -65°C to 150°C.
This model is designed for through-hole mounting in a TO-220 package.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height.
The maximum gate-source voltage ranges from -30 V to +30 V.
The forward voltage is 860 mV.
It utilizes an N-channel type.
This model belongs to the MDmesh series.
The maximum drain-source resistance is 400 mΩ.
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