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onsemi UltraFET Type N-Channel MOSFET, 24 A, 150 V Enhancement Mode, 8-Pin PQFN-8 FDMS2572
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.75mm |
| Length | 5mm |
| Model | FDMS2572 |
| Width | 6mm |
| Mount Type | Surface |
| Series | UltraFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 103mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features UltraFET trench technology for high efficiency in power conversion.
- Capable of handling a maximum power dissipation of 78 W.
- Low drain-source resistance of 103 mΩ ensures minimal conduction losses.
- Typical gate charge of 31 nC at Vgs enables fast switching.
- Operating temperature range from -55°C to 150°C supports demanding industrial environments.
- Compact dimensions with 6 mm width, 5 mm length, and 0.75 mm height facilitate PCB space optimization.
- Designed for applications in high frequency DC-DC converters and power management circuits.
- Enhancement mode channel suitable for switching regulators and motor driver circuits.
Product Description
onsemi FDMS2572 UltraFET Type N-Channel MOSFET is engineered to deliver superior efficiency in power management and conversion applications. With a maximum continuous drain current of 24 A and a drain-source voltage rating of 150 V, it offers reliable performance under demanding electrical conditions. The device is housed in a PQFN-8 package enabling surface mounting with a compact footprint characterized by 6 mm width, 5 mm length, and a low profile height of 0.75 mm.
This enhancement-mode MOSFET uses UltraFET trench technology, combining low resistance (103 mΩ) and low gate charge (31 nC at Vgs) to reduce conduction and switching losses. It is optimized for high-frequency DC to DC converters, switching regulators, and motor drivers. The package withstands operating temperatures from -55°C to 150°C ensuring robustness in industrial, automotive, and commercial electronics.
The device also features a forward voltage of 1 V, ensuring efficient conduction during operation. It is compliant with general semiconductor standards but does not carry automotive certification. Typical uses include power management modules and low-voltage bus switches where switching speed and efficiency are critical.
This onsemi MOSFET is suitable for installation in industrial automation systems, telecommunications infrastructure, and power supply designs requiring high reliability and performance.
High efficiency UltraFET trench MOSFET design. Low Rds(on) for reduced power loss. Designed for high frequency switching applications. Robust thermal handling with up to 78 W power dissipation. Compact 8-pin PQFN package for space saving PCB layouts.
Wide operating temperature range from -55°C to 150°C. Ideal for DC-DC converters, switching regulators, and motor drivers. Low forward voltage for minimized conduction drop.
Explore a comprehensive selection of semiconductor components and power solutions in the Electronics & Electricals category on EnvMart for your industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 A.
The maximum drain-source voltage rating is 150 V.
It can handle a maximum power dissipation of 78 W.
The dimensions of the PQFN-8 package are 6 mm in width, 5 mm in length, and 0.75 mm in height.
The typical gate charge is 31 nC at Vgs.
The operating temperature range is from -55°C to 150°C.
The drain-source resistance is 103 mΩ, ensuring minimal conduction losses.
It uses an enhancement mode N-channel.
It is designed for high-frequency DC-DC converters, switching regulators, and motor driver circuits.
The forward voltage is 1 V, which helps minimize conduction drop during operation.
This model is designed for surface mounting.
The maximum gate-source voltage rating is 20 V.
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