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DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 850 mA, 100 V Enhancement Mode, 8-Pin SOIC Package ZXMHC10A07N8TC
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 5mm |
| Model | ZXMHC10A07N8TC |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 850mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.36W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.95V |
| Transistor Configuration | Full Bridge |
Key Features
- This MOSFET device features an 8-pin SOIC surface mount package suitable for compact circuit board applications.
- The transistor configuration is a full bridge suitable for H-bridge designs.
- The maximum power dissipation is rated at 1.36 W for reliable operation.
- Operation temperature ranges from -55°C to a maximum of 150°C, meeting robust industrial requirements.
- Low maximum drain-source resistance of 1.45 mΩ ensures efficiency in power switching applications.
- Typical gate charge is 2.9 nC at a gate-source voltage of 20 V, allowing efficient switching control.
- The MOSFET package dimensions are 5 mm length, 4 mm width, and 1.5 mm height.
- The device complies with RoHS, J-STD-020, AEC-Q101, MIL-STD-202, and UL 94V-0 standards for quality and reliability.
Product Description
DiodesZetex ZXMHC10A07N8TC is a high-quality Full Bridge MOSFET integrating 4 Type P and Type N-channel enhancement mode MOSFET transistors within an 8-pin SOIC package.
It offers a maximum continuous drain current of 850 mA and supports a maximum drain-source voltage of 100 V, making it suitable for various power and switching electronic applications.
The device is designed for surface mount technology providing compact and efficient integration in printed circuit boards. Its low drain-source resistance of 1.45 mΩ contributes to reduced power losses and improved performance in power stages.
Thermally robust, it operates over a temperature range of -55°C up to 150°C, ensuring reliability in industrial and commercial environments. Full Bridge transistor configuration with 4 elements per chip supports efficient H-bridge circuits.
Maximum power dissipation rating of 1.36 W allows safe operation within device limits. Typical gate charge of 2.9 nC enables fast and efficient switching characteristics. Complies with critical industry standards including RoHS, J-STD-020, AEC-Q101, MIL-STD-202, and UL 94V-0 ensuring safety and environmental compliance.
Compact package size of 5 mm by 4 mm by 1.5 mm fits space-constrained applications.
This MOSFET is suitable for applications in industrial power electronics, electronic control units, and power management circuits in automotive, industrial automation, and consumer electronics sectors.
With its high current capacity and robust voltage ratings, the ZXMHC10A07N8TC enables designers to implement reliable and efficient power conversion and switching solutions. The product is sourced from China and continues the legacy of DiodesZetex quality semiconductor devices used globally in varied electronics and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 850 mA.
This device supports a maximum drain-source voltage of 100 V.
It comes in an 8-pin SOIC package with dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
The operating temperature range is from -55°C to a maximum of 150°C.
The typical gate charge is 2.9 nC at a gate-source voltage of 20 V.
The maximum power dissipation rating for this model is 1.36 W.
It complies with RoHS, J-STD-020, AEC-Q101, MIL-STD-202, and UL 94V-0 standards.
The maximum drain-source resistance is rated at 1.45 mΩ.
This device features a full bridge transistor configuration with 4 elements per chip.
It integrates both Type P and Type N-channel enhancement mode MOSFETs.
The maximum gate-source voltage for this model is 20 V.
Yes, it is designed for surface mount technology, making it suitable for compact circuit board applications.
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