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DiodesZetex N-Channel MOSFET 230 mA 250 V Enhancement Mode SOT-23 6-Pin ZVN4525E6
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3mm |
| Model | ZVN4525E6 |
| Width | 1.75mm |
| Mount Type | Surface |
| Series | ZVN4525E6 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q100, AEC-Q104, AEC-Q101, AEC-Q200 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 230mA |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 9.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.1W |
| Typical Gate Charge Qg @ Vgs | 2.6nC |
| Maximum Gate Source Voltage Vgs | 40V |
| Forward Voltage Vf | -1.1V |
Key Features
- This MOSFET features an enhancement type channel mode for efficient switching performance.
- Maximum continuous drain current (Id) is rated at 230 mA for reliable operation.
- Maximum drain-source voltage (Vds) of 250 V suits medium voltage applications.
- Surface mount package type SOT-23 with 6 pins enables compact PCB designs.
- Maximum power dissipation is 1.1 W, supporting moderate loads.
- Typical gate charge (Qg) at Vgs is 2.6 nC for low gate drive requirements.
- Maximum gate-source voltage rated at 40 V ensures safe gate operation.
- Operating temperature range from -55°C to 150°C covers industrial environments.
Product Description
DiodesZetex ZVN4525E6 is a high-quality N-Channel MOSFET designed for efficient switching and amplification in electronic applications. It supports a maximum continuous drain current of 230 mA and a maximum drain-source voltage of 250 V, making it suitable for a wide range of power management tasks.
The device employs enhancement mode channel characteristics, providing enhanced control and reliability in power circuits. Its compact 6-Pin SOT-23 surface mount package allows for space-saving PCB layouts suitable for industrial, automotive, and consumer electronics.
This MOSFET offers a maximum power dissipation of 1.1 W and a typical low gate charge of 2.6 nC at the specified gate-source voltage, ensuring low switching losses and efficient operation. The gate-source voltage maximum rating of 40 V provides sufficient overhead for robust signal interfacing.
Operating temperature ranges from -55°C up to 150°C enable this component to perform well under demanding conditions. Dimensionally, the device measures 3 mm in length, 1.75 mm in width, and 1.3 mm in height, easing integration into compact electronic assemblies.
This MOSFET is compliant with automotive standards AEC-Q100, AEC-Q104, AEC-Q101, and AEC-Q200, reflecting rigorous quality and reliability standards. It is ideal for applications within industrial electronics, automotive electronics, power management systems, and general purpose switching circuits.
Its small footprint and surface mount design make it especially suitable for modern compact electronic devices. The product originates from China and is supplied brand-new. Explore EnvMart for a wide selection of semiconductors and electronic components for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current (Id) for this model is rated at 230 mA.
It has a maximum drain-source voltage (Vds) of 250 V, suitable for medium voltage applications.
This MOSFET measures 3 mm in length, 1.75 mm in width, and 1.3 mm in height.
The typical gate charge (Qg) at the specified gate-source voltage (Vgs) is 2.6 nC, which supports low gate drive requirements.
The maximum power dissipation for this MOSFET is rated at 1.1 W, allowing it to support moderate loads.
The operating temperature range for the ZVN4525E6 is from -55°C to 150°C, making it suitable for industrial environments.
It comes in a surface mount package type SOT-23 with 6 pins, enabling compact PCB designs.
This model is compliant with automotive standards AEC-Q100, AEC-Q104, AEC-Q101, and AEC-Q200.
The maximum gate-source voltage (Vgs) is rated at 40 V, ensuring safe gate operation.
This MOSFET features an N-channel type, which is suitable for enhancement mode applications.
The maximum drain-source resistance (Rds) is specified at 9.5 Ω.
It is suitable for a wide range of applications including industrial electronics, automotive electronics, power management systems, and general purpose switching circuits.
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