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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | SBR160S23-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Power Dissipation Pd | 500mW |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 15A |
| Maximum Forward Voltage Vf | 740mV |
| Peak Reverse Recovery Time trr | 16ns |
| Maximum Forward Current If | 900mA |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 60V |
DiodesZetex SBR160S23-7 is a silicon junction switching diode designed for surface mounting in compact electronic assemblies. This single diode device supports a maximum forward current of 900 mA and operates efficiently within a voltage of up to 60 V. Encapsulated in a 3-pin SOT-23 package, it offers a small form factor suitable for space-constrained industrial and consumer electronics applications.
This switching diode excels in fast switching with a peak reverse recovery time of just 16 nanoseconds, making it ideal for use in power circuits that require quick response times. It can sustain a maximum power dissipation of 500 mW, ensuring safe operation under typical load conditions.
The device operates reliably across a broad temperature range, from -65°C minimum to 150°C maximum, allowing usage in various industrial, automotive, and consumer electronic environments. Its maximum forward voltage drop of 740 mV helps achieve lower power losses during conduction.
The dimensions of the diode are 3 mm in length, 1.4 mm in width, and 1.1 mm in height, which facilitates its integration into printed circuit boards where compactness is essential.
This device is manufactured in China under reliable production standards and is supplied in new condition. Its robust design makes it suitable for electronic components in power supplies, switching circuits, and other semiconductor applications requiring high reliability and performance.
This switching diode features a single silicon junction configuration. It has a maximum forward current of 900 mA for reliable operation. The diode is enclosed in a SOT-23 surface mount package with 3 pins. Capable of handling maximum power dissipation of 500 mW.
Peak reverse recovery time is 16 ns for fast switching performance. Operating temperature ranges from -65°C to 150°C ensuring durability. Maximum peak reverse repetitive voltage rating of 60 V safeguards against voltage spikes.
Maximum forward voltage drop is 740 mV for efficient conduction. Dimensions are compact at 3 mm length, 1.4 mm width, and 1.1 mm height. Manufactured in China with new product condition guaranteed.
This diode is widely applicable in industrial electronic design, power management circuits, automotive electronics, consumer devices, and other laboratory or manufacturing environments requiring reliable switching diode technology. Browse more semiconductor and diode products in the Electronics & Electricals category at EnvMart.
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