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onsemi NPN Power Transistor 16 A, 250 V, 200 W TO-247 MJW21194G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 16.26mm |
| Model | MJW21194G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | MJW21194 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 8 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 400V dc |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | 16A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Maximum DC collector current of 16 amperes ensures high current handling capability.
- Collector-emitter voltage rated up to 250 volts for robust operation.
- Transistor configured as a single NPN type for power switching applications.
- Power dissipation rating of 200 watts supports high power usage.
- Package type TO-247 suitable for through-hole mounting.
- Wide operating temperature range from -65°C to 150°C for industrial reliability.
- Gain (hFE) minimum of 8 ensures adequate amplification.
- Maximum transition frequency of 1 MHz enables moderate speed switching.
Product Description
onsemi MJW21194G is a high power NPN transistor designed for industrial and electronic applications requiring robust switching capabilities. It supports a maximum DC collector current of 16 A and withstands up to 250 V collector-emitter voltage, making it ideal for power regulation, amplification, and switching circuits.
This transistor is housed in a durable TO-247 package supporting through-hole mounting, suitable for integration into power electronic assemblies, industrial controllers, and manufacturing equipment.
Operating across a temperature range of -65°C to 150°C, the MJW21194G is reliable for demanding environments such as industrial automation, power supplies, HVAC control, and commercial electrical equipment.
The device features a minimum DC current gain (hFE) of 8 and a maximum transition frequency of 1 MHz, balancing gain and switching speed for efficient performance in moderate frequency applications.
The physical dimensions of 16.26 mm length, 5.3 mm width, and 1.65 mm height assure compatibility with standard layouts and assemblies. Maximum DC collector current of 16 amperes ensures high current handling capability.
Collector-emitter voltage rated up to 250 volts for robust operation. Power dissipation rating of 200 watts supports high power usage. Single NPN transistor configuration for power and switching uses. TO-247 package for reliable through-hole mounting and heat dissipation.
Wide operating temperature range from -65°C to 150°C for industrial reliability. Minimum DC current gain (hFE) of 8 for effective transistor amplification. Maximum transition frequency up to 1 MHz for moderate frequency switching.
Compact physical size compatible with standard industrial assemblies.
This transistor is commonly used in industrial automation, power conversion systems, electronic manufacturing, HVAC systems, and general electronic component applications requiring efficient high-power handling capabilities.
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Frequently Asked Questions
The maximum DC collector current of the MJW21194G is 16 amperes, allowing it to handle high current applications effectively.
This transistor has a collector-emitter voltage rating of up to 250 volts, ensuring robust operation in power applications.
The power dissipation rating of this transistor is 200 watts, supporting high power usage in various applications.
It is housed in a TO-247 package, which is suitable for through-hole mounting.
The MJW21194G operates within a temperature range of -65°C to 150°C, making it reliable for industrial applications.
The minimum DC current gain (hFE) for the MJW21194G is 8, providing adequate amplification for various applications.
The maximum transition frequency of the MJW21194G is 1 MHz, enabling moderate speed switching capabilities.
This transistor measures 16.26 mm in length, 5.3 mm in width, and 1.65 mm in height, ensuring compatibility with standard layouts.
The MJW21194G is configured as a single NPN type transistor, suitable for power switching applications.
The maximum emitter-base voltage (VEBO) for the MJW21194G is 5 volts, which is critical for ensuring safe operation.
This transistor is commonly used in industrial automation, power conversion systems, and HVAC control, among other electronic applications.
The maximum collector-base voltage (VCBO) for the MJW21194G is 400 volts DC, providing a robust operating range for various applications.
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