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onsemi 650 V 11.6 A Schottky Diode Surface Mount TO-252 3-Pin DPAK FFSD0865B

Category Schottky Diodes & Rectifiers Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 6.22mm
Length 6.73mm
Model FFSD0865B
Width 2.39mm
Mount Type Surface
Series FFSD0865B
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Forward Current If 11.6A
Peak Reverse Repetitive Voltage Vrrm 650V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 160μA
Peak Non-Repetitive Forward Surge Current Ifsm 577A
Maximum Forward Voltage Vf 2.4V

Key Features

  • Schottky diode with low forward voltage for efficient power conversion.
  • Maximum continuous forward current of 11.6 amperes.
  • Peak reverse voltage rating of 650 volts suitable for high voltage applications.
  • Compact TO-252 DPAK package with 3 pins designed for surface mounting.
  • Operates in a wide temperature range from -55°C to 175°C maximum.
  • High peak non-repetitive surge current of 577 amperes.
  • Excellent thermal performance with silicon carbide technology.
  • Typical applications include power factor correction and power management circuits.

Product Description

onsemi FFSD0865B is a high reliability Schottky diode designed for power electronics applications requiring high efficiency and fast switching.

This Schottky rectifier features a maximum continuous forward current of 11.6 A and a peak reverse repetitive voltage of 650 V housed in a TO-252 3-pin DPAK surface mount package. It leverages silicon carbide (SiC) technology to provide no reverse recovery current, temperature-independent switching characteristics, and superior thermal performance compared to silicon devices.

The device operates effectively from -55°C to 175°C, supports a peak non-repetitive surge current of 577 A, and has a maximum forward voltage of 2.4 V.

Key advantages of this elite SiC Schottky diode include high efficiency, fast switching speed, reduced electromagnetic interference (EMI), and increased power density allowing for smaller system sizes and costs.

Typical industrial applications for the FFSD0865B include power factor correction circuits, power supplies, DC-DC converters, and other power management systems utilized in commercial, manufacturing, and automation industries.

Schottky diode technology offers fast switching with low forward voltage drop. Surface mount TO-252 3-pin DPAK package for easy PCB integration. Wide operating temperature range from -55°C to 175°C. Supports high surge currents and avalanche energy for robustness.

Silicon carbide construction delivers superior thermal and switching performance. Ideal for industrial power electronics and energy efficient designs. Reduces system size, EMI, and overall power losses. RoHS compliant and suitable for modern power designs.

This product is made in China and supplied new. It represents a cutting-edge solution for semiconductor power components in demanding industrial and electronic applications. Browse the Electronics & Electricals category at EnvMart for more semiconductor and Schottky diode components from top manufacturers.

Explore more products in our Schottky Diodes & Rectifiers category.

onsemi 650 V 11.6 A Schottky Diode Surface Mount TO-252 3-Pin DPAK FFSD0865B
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Frequently Asked Questions

The maximum continuous forward current of this Schottky diode is 11.6 amperes.

The peak reverse voltage rating for this model is 650 volts, making it suitable for high voltage applications.

It operates effectively in a wide temperature range from -55°C to 175°C.

This diode is housed in a TO-252 3-pin DPAK surface mount package.

The maximum forward voltage of this model is 2.4 volts.

The peak non-repetitive surge current rating is 577 amperes.

The dimensions are 6.73 mm in length, 2.39 mm in width, and 6.22 mm in height.

This model is a Schottky rectifier, which offers fast switching with low forward voltage drop.

The peak reverse current for this model is 160 microamperes.

Typical applications include power factor correction circuits, power supplies, and DC-DC converters.

The diode configuration for this model is single.

It leverages silicon carbide (SiC) technology to provide excellent thermal performance.

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