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onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 HUF75339P3

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onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 HUF75339P3

Name: onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 HUF75339P3
Brand: onsemi
SKU: 101094
Price: 1.96 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	Malaysia
Brand	onsemi
Height	9.4mm
Length	10.67mm
Model	HUF75339P3
Width	4.83mm
Mount Type	Through Hole
Series	UltraFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	75A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	12mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	200W
Typical Gate Charge Qg @ Vgs	110nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.25V

Key Features

This MOSFET has a maximum continuous drain current of 75 A and maximum drain-source voltage of 55 V.
The TO-220 package with through-hole mounting and 3 pins ensures robust installation and ease of use.
It features an enhancement-type channel mode with a low drain-source resistance of 12 mΩ for minimized power loss.
The device supports a typical gate charge of 110 nC at Vgs and a maximum gate-source voltage of 20 V.
Its maximum power dissipation rating is 200 W, suitable for demanding industrial circuits.
Operating temperature ranges from -55°C to 175°C, making it reliable for harsh environments.
This component is optimized for use in DC-DC converters, switching regulators, and motor driver circuits.
The forward voltage is typically 1.25 V under operational conditions.

Product Description

onsemi HUF75339P3 UltraFET Type N-Channel MOSFET, rated at 75 A and 55 V, is a high-performance transistor designed for efficient power switching and conversion applications in industrial and electronic systems.

Its TO-220 3-pin package supports through-hole mounting, facilitating robust mechanical and electrical connections in power management circuits. The device features a trench-type UltraFET structure that provides low on-resistance of 12 mΩ, ensuring minimal conduction losses and improved efficiency at high frequencies.

The enhancement-mode channel and 20 V maximum gate-source voltage support precise gate control. The MOSFET can dissipate up to 200 W of power and operates reliably in temperatures ranging from -55°C to 175°C, suitable for industrial environments requiring thermal resilience.

Typical applications include DC-DC converters, high-frequency switching regulators, motor drivers, bus switches, and power management solutions where efficient power handling and quick switching are critical.

This MOSFET supports a 75 A continuous drain current and 55 V drain-source voltage rating. Low gate charge of 110 nC helps reduce switching losses and increase efficiency. The forward voltage is typically 1.25 V under operational conditions.

Robust construction and optimized electrical characteristics make it ideal for high-frequency power conversion. Designed to meet demanding industrial, electronic, automotive, and power control applications.

The onsemi HUF75339P3 MOSFET is an essential component for engineers designing efficient power electronics. For more detailed selection or alternatives, browse further products in the Semiconductors and MOSFET category at EnvMart.