onsemi Bipolar Power Transistor, NPN 10 A Collector Current, 40 V Collector-Emitter Voltage, 3-Pin TO-225 MJE200G

onsemi MJE200G Bipolar Power Transistor, model MJE200G, is a high gain NPN transistor designed for low voltage, low power audio amplifier and power switching applications. It delivers robust performance with a maximum DC collector current of 10 A and collector-emitter voltage of 40 V. Housed in a TO-225 package with 3 pins, this transistor supports through-hole mounting for easy PCB installation.

The device features a maximum power dissipation of 15 W, allowing it to handle significant power loads while maintaining reliability. It offers a high DC current gain with a minimum hFE of 10 and a transition frequency of 10 MHz, making it suitable for moderate frequency operations in audio and power control circuits.

Operating temperatures up to 150°C make the MJE200G fit for demanding industrial, commercial, and consumer electronic environments. The transistor’s maximum collector base voltage of 25 V and emitter base voltage of 8 V provide additional protection margins. Its compact physical size (27.1 mm height, 8 mm length, and 3.25 mm width) facilitates integration into dense circuit assemblies.

The MJE200G series employ annular construction to reduce leakage currents and improve efficiency. The device is Pb-free, complying with environmental regulations and suitable for green manufacturing. It is complementary to the MJE210 PNP transistor, enabling push-pull amplifier designs.

Maximum DC collector current of 10 A provides robust current handling. Collector-emitter voltage rating of 40 V ensures suitability for low voltage circuits. TO-225 package with 3-pin configuration supports through-hole mounting.

High power dissipation rating of 15 W supports high power applications. NPN transistor polarity ideal for amplification and switching. Maximum operating temperature up to 150°C allows use in demanding environments. Minimum DC current gain (hFE) of 10 for reliable gain performance.

Maximum transition frequency of 10 MHz for moderate speed applications. Compact dimensions: height 27.1 mm, length 8 mm, width 3.25 mm. Pb-free device conforming to environmental standards.

This transistor is commonly used in industrial, consumer electronics, HVAC systems, audio amplifiers, and power management circuits where reliable switching and amplification are crucial.

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