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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF1010EPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 84A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 12mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF1010E 83A 60VBrand | International Rectifier |
Infineon IRF1010EPBF HEXFET Type N-Channel MOSFET is a robust and efficient discrete semiconductor rated for maximum continuous drain current of 84 amperes and maximum drain-source voltage of 60 volts. Packaged in the TO-220 form factor, it enables straightforward mounting with excellent thermal dissipation capabilities, essential for power electronics applications.
This MOSFET operates in enhancement mode with a very low on-resistance of 12 milliohms, minimizing power losses and heat generation during conduction. The device supports a maximum power dissipation of 200 watts, allowing use in high-current switching applications.
Designed for harsh use conditions, this MOSFET functions reliably across a temperature range of -55°C up to 175°C. The fast switching performance is facilitated by a typical gate charge of 130 nanocoulombs at a gate-to-source voltage of 10 volts, enabling responsive and efficient control in dynamic circuits.
The device is fully avalanche rated, providing additional protection against voltage spikes, making it reliable for motor control, power supply regulation, and driver circuits. It features through-hole mounting and a 3-pin TO-220 package that supports various industrial and commercial PCB layouts.
Industrial and commercial use cases include automation, power management systems, motor drives, and signal amplification tasks where efficient power control is critical. Its robust design ensures dependable operation even in high-temperature and high-load conditions.
This MOSFET provides low on-resistance to reduce power loss at high current levels. A high continuous drain current of 84A allows for efficient power delivery. Compact TO-220AB package supports easy mounting and heat dissipation.
Fast switching capability improves performance in dynamic electronic circuits. Fully avalanche rated for enhanced device protection and durability. Supports wide operating temperature range for rugged environments. Designed for through-hole PCB mounting in power electronics.
Applied widely in power supplies, motor control, and driver circuits. Ensures reliability under sustained heavy loads and thermal stress.
Explore our comprehensive Semiconductor and MOSFET categories for additional Infineon power devices and related components tailored for your electronic automation and power management needs.
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