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Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V, 200 W TO-220 TO-220 Package IRF1010EPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRF1010EPBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 84A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 12mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 200W
Typical Gate Charge Qg @ Vgs 130nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V
N-channel MOSFET,IRF1010E 83A 60VBrand International Rectifier

Key Features

  • This device is housed in a compact TO-220 package for easy mounting and thermal management.
  • It boasts a low maximum drain-source resistance of 12 milliohms, reducing conduction losses and improving efficiency.
  • The MOSFET supports a maximum power dissipation of 200 watts, suitable for demanding power circuits.
  • Operating temperature ranges from -55°C to 175°C ensure device robustness in harsh environments.
  • Fast switching capabilities enabled by a typical gate charge of 130 nC at 10 volts enhance circuit responsiveness.
  • The maximum gate-source voltage tolerance is 20 volts, providing design safety margins.
  • This enhancement mode device supports through-hole mounting, facilitating installation on various board designs.
  • It offers fully avalanche-rated protection to guard against switching surges and overvoltage events.

Product Description

Infineon IRF1010EPBF HEXFET Type N-Channel MOSFET is a robust and efficient discrete semiconductor rated for maximum continuous drain current of 84 amperes and maximum drain-source voltage of 60 volts. Packaged in the TO-220 form factor, it enables straightforward mounting with excellent thermal dissipation capabilities, essential for power electronics applications.

This MOSFET operates in enhancement mode with a very low on-resistance of 12 milliohms, minimizing power losses and heat generation during conduction. The device supports a maximum power dissipation of 200 watts, allowing use in high-current switching applications.

Designed for harsh use conditions, this MOSFET functions reliably across a temperature range of -55°C up to 175°C. The fast switching performance is facilitated by a typical gate charge of 130 nanocoulombs at a gate-to-source voltage of 10 volts, enabling responsive and efficient control in dynamic circuits.

The device is fully avalanche rated, providing additional protection against voltage spikes, making it reliable for motor control, power supply regulation, and driver circuits. It features through-hole mounting and a 3-pin TO-220 package that supports various industrial and commercial PCB layouts.

Industrial and commercial use cases include automation, power management systems, motor drives, and signal amplification tasks where efficient power control is critical. Its robust design ensures dependable operation even in high-temperature and high-load conditions.

This MOSFET provides low on-resistance to reduce power loss at high current levels. A high continuous drain current of 84A allows for efficient power delivery. Compact TO-220AB package supports easy mounting and heat dissipation.

Fast switching capability improves performance in dynamic electronic circuits. Fully avalanche rated for enhanced device protection and durability. Supports wide operating temperature range for rugged environments. Designed for through-hole PCB mounting in power electronics.

Applied widely in power supplies, motor control, and driver circuits. Ensures reliability under sustained heavy loads and thermal stress.

Explore our comprehensive Semiconductor and MOSFET categories for additional Infineon power devices and related components tailored for your electronic automation and power management needs.

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V, 200 W TO-220 TO-220 Package IRF1010EPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 84 amperes.

It supports a maximum drain-source voltage of 60 volts.

This MOSFET can dissipate a maximum power of 200 watts.

The maximum drain-source resistance is 12 milliohms, which helps reduce conduction losses.

The typical gate charge is 130 nanocoulombs at a gate-to-source voltage of 10 volts.

It operates within a temperature range of -55°C to 175°C.

This model supports through-hole mounting, making it suitable for various board designs.

This MOSFET features a 3-pin configuration.

It is housed in a TO-220 package, which facilitates easy mounting and heat dissipation.

The maximum gate-source voltage tolerance is 20 volts.

Yes, it is fully avalanche rated, providing protection against voltage spikes.

This MOSFET is suitable for motor control, power supply regulation, and driver circuits.

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