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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF9530NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.6V |
| P-channel MOSFET,IRF9530N 13A 100VBrand | International Rectifier |
| P-Channel MOSFET Transistor, 12 A, 100 V, 3-Pin TO-220NIS Toshiba 2SJ380Brand | Toshiba |
Infineon IRF9530NPBF is a HEXFET type P-Channel MOSFET designed for high-efficiency and reliable power switching. Featuring a maximum continuous drain current of 14 A and a drain-source voltage rating of 100 V, this device supports a range of demanding electrical and electronic applications.
The enhancement mode channel improves switching reliability, and the device’s low on-resistance of 200 mΩ reduces conduction losses, making it ideal for power management systems. Packaged in the TO-220 format, it ensures convenient mounting and effective heat dissipation to maintain performance stability during operation.
Operating between -55°C and 175°C, the IRF9530NPBF is suited for harsh industrial, automation, and electronic environments. It can handle a maximum power dissipation of 79 W, ensuring longevity under high load conditions.
The typical gate charge of 58 nC allows efficient gate drive with minimal power loss, while its gate-source voltage rating of ±20 V provides protection against voltage spikes.
This MOSFET is extensively used in power supply circuits, motor control applications, power converters, and high current driver circuits. Its ability to be paralleled enables flexible current capacity scaling, provided appropriate thermal management is applied.
Maximum continuous drain current of 14 A supports robust power handling. Drain-source voltage rating of 100 V for versatile application. Low on-resistance of 200 mΩ enhances power efficiency. TO-220 package facilitates mounting and heat dissipation.
Enhancement mode operation ensures reliable switching. Wide operating temperature range from -55°C to 175°C. Maximum power dissipation of 79 W for heavy load operation. Typical gate charge of 58 nC for efficient switching.
High gate-source voltage rating of ±20 V for protection. Suitable for power supplies, motor control, and power converters. Explore the Electronics & Electricals category for a complete range of semiconductor MOSFETs and related components on EnvMart.
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