Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon HEXFET Type P-Channel MOSFET 14 A 100 V Enhancement Mode 3-Pin TO-220 IRF9530NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRF9530NPBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 14A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 79W
Typical Gate Charge Qg @ Vgs 58nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.6V
P-channel MOSFET,IRF9530N 13A 100VBrand International Rectifier
P-Channel MOSFET Transistor, 12 A, 100 V, 3-Pin TO-220NIS Toshiba 2SJ380Brand Toshiba

Key Features

  • Maximum continuous drain current of 14 A supports robust power handling.
  • Drain-source voltage rating of 100 V for versatility in various circuits.
  • Low on-resistance of 200 mΩ enhances overall power efficiency.
  • TO-220 package offers easy mounting and effective heat dissipation.
  • Enhancement mode operation ensures reliable switching performance.
  • Operating temperature range from -55°C to 175°C supports extreme environments.
  • Maximum power dissipation of 79 W for high load demands.
  • Typical gate charge of 58 nC for efficient switching.

Product Description

Infineon IRF9530NPBF is a HEXFET type P-Channel MOSFET designed for high-efficiency and reliable power switching. Featuring a maximum continuous drain current of 14 A and a drain-source voltage rating of 100 V, this device supports a range of demanding electrical and electronic applications.

The enhancement mode channel improves switching reliability, and the device’s low on-resistance of 200 mΩ reduces conduction losses, making it ideal for power management systems. Packaged in the TO-220 format, it ensures convenient mounting and effective heat dissipation to maintain performance stability during operation.

Operating between -55°C and 175°C, the IRF9530NPBF is suited for harsh industrial, automation, and electronic environments. It can handle a maximum power dissipation of 79 W, ensuring longevity under high load conditions.

The typical gate charge of 58 nC allows efficient gate drive with minimal power loss, while its gate-source voltage rating of ±20 V provides protection against voltage spikes.

This MOSFET is extensively used in power supply circuits, motor control applications, power converters, and high current driver circuits. Its ability to be paralleled enables flexible current capacity scaling, provided appropriate thermal management is applied.

Maximum continuous drain current of 14 A supports robust power handling. Drain-source voltage rating of 100 V for versatile application. Low on-resistance of 200 mΩ enhances power efficiency. TO-220 package facilitates mounting and heat dissipation.

Enhancement mode operation ensures reliable switching. Wide operating temperature range from -55°C to 175°C. Maximum power dissipation of 79 W for heavy load operation. Typical gate charge of 58 nC for efficient switching.

High gate-source voltage rating of ±20 V for protection. Suitable for power supplies, motor control, and power converters. Explore the Electronics & Electricals category for a complete range of semiconductor MOSFETs and related components on EnvMart.

Infineon HEXFET Type P-Channel MOSFET 14 A 100 V Enhancement Mode 3-Pin TO-220 IRF9530NPBF
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 14 A.

The drain-source voltage rating is 100 V, allowing versatility in various circuits.

It features a low on-resistance of 200 mΩ, which enhances overall power efficiency.

The operating temperature range is from -55°C to 175°C, making it suitable for extreme environments.

The maximum power dissipation is 79 W, which supports high load demands.

The typical gate charge is 58 nC, allowing for efficient switching with minimal power loss.

It is packaged in a TO-220 format, which facilitates easy mounting and effective heat dissipation.

The maximum gate-source voltage rating is ±20 V, providing protection against voltage spikes.

This model has a pin count of 3.

The channel type is P-Channel, designed for enhancement mode operation.

It is suitable for power supply circuits, motor control applications, power converters, and high current driver circuits.

The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.

Related Products

Other Products from this brand

$0.97
$0.94 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.97
$0.94
Tax included