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Vishay Single 1 Type N-Channel Power MOSFET 7.9 A 250 V TO-220FP IRFI644GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRFI644GPBF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Number of Elements per Chip | 1 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 7.9A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 0.28Ω |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 68nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- High maximum continuous drain current of 7.9 amperes for robust performance.
- Drain-source voltage rating of 250 volts suitable for power switching applications.
- Low drain-source resistance of 0.28 ohms for efficient conduction.
- Typical gate charge of 68 nanocoulombs allowing fast switching.
- Maximum power dissipation of 40 watts ensures reliable thermal management.
- Operating temperature range from -55°C to 150°C for versatile environments.
- Single transistor configuration in a TO-220FP isolated package.
- Lead (Pb) free and RoHS compliant for environmental safety.
Product Description
Vishay IRFI644GPBF Single 1 Type N-Channel Power MOSFET is designed for high efficiency and reliable power switching applications. It features a maximum continuous drain current of 7.9 A and can withstand drain-source voltages up to 250 V. The transistor is housed in a TO-220FP isolated package, ensuring thermal efficiency and safety during operation. Its maximum power dissipation is 40 W, with a low drain-source resistance of 0.28 Ω providing efficient conduction.
This MOSFET offers a typical gate charge of 68 nC at Vgs, allowing fast switching capabilities with reduced losses. The device operates within a wide temperature range from -55°C to 150°C, making it suitable for various industrial and commercial environments. Additionally, it complies with RoHS directives and is a lead-free component, supporting environmentally responsible manufacturing and disposal.
The MOSFET's isolated package features a 4.8 mm creepage distance from sink to lead, enhancing electrical safety in demanding power electronics designs. Its dynamic dV/dt rating and optimized conduction characteristics help minimize switching losses, improving overall system efficiency and reliability.
Typical applications include battery chargers, inverters, power supplies, and switching mode power supply (SMPS) designs where reliable performance and durability are crucial. This component is engineered to deliver long service life without compromising power handling capability or switching speed.
High maximum continuous drain current of 7.9 amperes for robust performance. Drain-source voltage rating of 250 volts suitable for power switching applications. Low drain-source resistance of 0.28 ohms for efficient conduction.
Typical gate charge of 68 nanocoulombs allowing fast switching. Maximum power dissipation of 40 watts ensures reliable thermal management. Wide operating temperature range from -55°C to 150°C for versatile environments. Single transistor configuration in a TO-220FP isolated package.
Lead (Pb) free and RoHS compliant for environmental safety. Optimized for low switching and conduction losses to enhance efficiency. Applications in battery chargers, inverters, power supplies, and SMPS. Explore more semiconductor and MOSFET products at EnvMart for your industrial, electronic component, and power management needs.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay IRFI644GPBF is 7.9 A.
This MOSFET has a drain-source voltage rating of 250 V, making it suitable for power switching applications.
The low drain-source resistance of this model is 0.28 Ω, which allows for efficient conduction.
The typical gate charge at Vgs for the IRFI644GPBF is 68 nC, facilitating fast switching capabilities.
The maximum power dissipation for the Vishay IRFI644GPBF is 40 W, ensuring reliable thermal management.
This model operates within a temperature range of -55°C to 150°C, suitable for various environments.
The IRFI644GPBF is housed in a TO-220FP isolated package, enhancing thermal efficiency and safety.
Yes, the Vishay IRFI644GPBF is lead-free and complies with RoHS directives for environmental safety.
The maximum gate-source voltage (Vgs) for this MOSFET is 20 V.
Typical applications for this model include battery chargers, inverters, power supplies, and switching mode power supplies (SMPS).
This MOSFET has a single element per chip configuration.
The dynamic dV/dt rating is optimized to minimize switching losses, improving overall system efficiency.
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