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Vishay Single N-Channel Power MOSFET 200 V 5.2 A 50 W TO-263 Surface Mount IRF620SPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRF620SPBF |
| Mount Type | Surface |
| Series | IRF620S |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 5.2A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 0.8Ω |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- This MOSFET features a TO-263 surface mount package suitable for compact PCB layouts.
- It supports a maximum power dissipation of 50 W for reliable thermal performance.
- The device has a low drain-source resistance of 0.8 Ω to reduce conduction losses.
- Typical gate charge of 14 nC enhances switching efficiency and reduces power consumption.
- Operates across a wide temperature range from -55°C to 150°C for demanding industrial environments.
- Compliant with RoHS 2002/95/EC and IEC 61249-2-21 environmental standards.
- Designed for use in power supplies, motor drive gate switching, and PWM power conversion circuits.
- The transistor configuration is a single element per chip, simplifying circuit design.
Product Description
Vishay IRF620SPBF is a single N-channel power MOSFET designed for high-voltage and moderate current switching applications. It supports a maximum continuous drain current of 5.2 A and a drain-source voltage of 200 V, making it suitable for robust power supply designs and motor control circuits.
Housed in a TO-263 surface mount package, this MOSFET offers efficient thermal dissipation with a maximum power rating of 50 W. Its low 0.8 Ω drain-source resistance reduces conduction losses, while the typical gate charge of 14 nC enhances switching speed and efficiency. Operating temperature ranges from -55°C to 150°C ensure reliability under diverse environmental conditions.
The device complies with RoHS and IEC standards, assuring environmentally friendly manufacturing and material compliance. It is ideal for printed circuit board (PCB) layouts requiring compact and reliable power switching components.
Common industrial uses include 200 V switching power supplies, motor driver gate switching, pulse-width modulation (PWM) controllers, and other power conversion applications in electronics and industrial systems.
This MOSFET features a TO-263 surface mount package suitable for compact PCB layouts. Maximum continuous drain current is 5.2 A with 200 V maximum drain-source voltage. Low drain-source resistance of 0.8 Ω for reduced conduction losses.
Maximum power dissipation rating of 50 W for sustained performance. Typical gate charge of 14 nC improves switching efficiency. Operating temperature range from -55°C to 150°C for wide thermal tolerance. Single transistor configuration with one element per chip simplifies design.
Choose Vishay IRF620SPBF for high-voltage, efficient power switching tasks in industrial, automotive, and consumer electronics applications. Explore more power semiconductor products and solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.2 A.
It can handle a maximum drain-source voltage of 200 V.
The maximum power dissipation rating is 50 W.
The drain-source resistance is 0.8 Ω, which helps reduce conduction losses.
The typical gate charge is 14 nC, enhancing switching efficiency.
It operates within a temperature range of -55°C to 150°C.
This model uses a TO-263 surface mount package suitable for compact PCB layouts.
There is one element per chip in this transistor configuration.
The maximum gate-source voltage is 20 V.
It is commonly used in power supplies, motor drive gate switching, and PWM power conversion circuits.
The channel type of this device is N-channel.
The country of origin for this model is China.
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