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Vishay TrenchFET Type P-Channel MOSFET 6 A 20 V Enhancement 3-Pin SOT-23 SI2399DS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.04mm |
| Model | SI2399DS-T1-GE3 |
| Width | 2.64mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 67mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- TrenchFET technology enables excellent efficiency and low conduction losses.
- Supports an operating temperature range from -55°C to 150°C allowing robust thermal performance.
- Enhancement mode channel with a maximum drain source resistance of 67 mΩ.
- Maximum power dissipation rating of 1.6 W suits varied applications.
- Typical gate charge Qg is 10 nC at Vgs, facilitating fast switching behavior.
- Compliant with halogen free and lead (Pb) free environmental standards.
- Designed for applications such as DC/DC converters, load switches, and power amplifier switches.
Product Description
Vishay SI2399DS-T1-GE3 is a TrenchFET type P-Channel MOSFET designed for surface mount applications offering a maximum continuous drain current (Id) of 6 A and a maximum drain-source voltage (Vds) of 20 V. This enhancement mode transistor provides efficient switching with optimized low conduction losses, making it suitable for industrial, electronic component manufacturing, and power management systems.
The device is housed in a compact 3-pin SOT-23 package, measuring 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height, enabling dense PCB layouts. It supports an operating temperature range from -55°C to 150°C, ensuring reliable operation under harsh thermal conditions.
Key electrical characteristics include a maximum drain-source resistance (Rds) of 67 mΩ, maximum power dissipation of 1.6 W, a typical gate charge of 10 nC at specified gate voltage, and a maximum gate-source voltage rating of 20 V. The negative forward voltage of -1.2 V further supports efficient power conduction.
This Vishay MOSFET is well-suited for applications such as DC/DC converters, load switching circuits, and power amplifier switch functions in telecommunications and industrial control systems. It complies with halogen-free and lead-free standards for environmental safety.
TrenchFET technology for low switching and conduction losses. High current capability of 6 A for demanding loads. Wide temperature operation from -55°C to 150°C. Compact SOT-23 surface mount footprint. Enhanced switching characteristics for reliable efficiency.
Halogen free and lead (Pb) free compliant manufacture. Applications in power management, DC/DC converters, and load switches. Choose Vishay MOSFETs from EnvMart for durable, high-performance electronic component solutions tailored to industrial and commercial use.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A.
The maximum drain-source voltage (Vds) rating is 20 V.
The typical gate charge (Qg) at Vgs is 10 nC.
The maximum power dissipation rating is 1.6 W.
The dimensions of the SOT-23 package are 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height.
It supports an operating temperature range from -55°C to 150°C.
The maximum drain-source resistance (Rds) is 67 mΩ.
This model is designed for applications such as DC/DC converters, load switches, and power amplifier switches.
It utilizes an enhancement mode P-channel type channel.
It is compliant with halogen-free and lead (Pb) free environmental standards.
The maximum gate-source voltage (Vgs) rating is 20 V.
The forward voltage (Vf) rating is -1.2 V.
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