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onsemi Dual 2 Type N-Channel MOSFET, 36 A Maximum Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin DFN NVMFD5C470NL
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NVMFD5C470NL |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NVMFD5C470NL |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 17.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 24W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
| Transistor Configuration | Dual |
Key Features
- Features dual N-Channel MOSFET transistors in one chip for efficient power management.
- Supports a maximum continuous drain current of 36 A for high power applications.
- Operates with a maximum drain source voltage of 40 V suitable for automotive and industrial use.
- Built with enhancement mode channel for improved transistor performance.
- Surface mount DFN package with 8 pins ensures compact PCB design.
- Has a low maximum drain source resistance (Rds) of 17.8 mΩ to minimize conduction losses.
- Rated maximum power dissipation of 24 W and high operating temperature tolerance up to 175°C.
- Meets automotive standard AEC-Q101 for reliable automotive applications.
Product Description
The onsemi NVMFD5C470NL is a dual N-Channel MOSFET designed for compact and efficient power management in automotive and industrial systems. This enhancement mode transistor features a maximum continuous drain current of 36 A and a drain source voltage rating of 40 V, making it suitable for high-demand applications such as solenoid drivers, automotive engine controllers, and antilock braking systems. The device is housed in a low-profile 8-Pin DFN package measuring 5.1 mm in width, 6.1 mm in length, and 1.05 mm in height, allowing for space-saving PCB layouts.
This MOSFET offers excellent electrical performance through a low on-resistance (Rds) of 17.8 mΩ, minimizing conduction losses and increasing energy efficiency. Its maximum power dissipation of 24 W and capability to operate at temperatures up to 175°C ensures reliability under demanding conditions. The transistor includes a typical gate charge of 9 nC at specified gate-source voltage, allowing for efficient switching and reduced driver losses.
Designed to meet the stringent automotive standard AEC-Q101, the NVMFD5C470NL features a wettable flank option that enhances optical inspection and quality assurance during manufacturing processes. This makes it particularly useful for automotive and industrial applications where reliability and compliance are critical.
Dual N-Channel MOSFET configuration reduces component count in designs. Surface mount package type ensures ease of automated assembly. Low forward voltage of 0.9 V for fast switching and efficiency. Wide operating temperature range from -55°C to 175°C for harsh environments.
Pin count of 8 allows compact connectivity and routing. Suitable for applications including solenoid drivers, low side and high side drivers, and automotive engine control. PPAP capable for automotive production part approval process.
The NVMFD5C470NL is an ideal choice for engineers seeking a high-performance, reliable MOSFET solution for automotive and industrial electronic designs. EnvMart provides this onsemi part with detailed technical support and documentation resources for seamless integration into your projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 36 A, making it suitable for high power applications.
This MOSFET has a maximum drain source voltage rating of 40 V, which is appropriate for automotive and industrial use.
It is housed in an 8-Pin DFN package with dimensions of 5.1 mm in width, 6.1 mm in length, and 1.05 mm in height.
The rated maximum power dissipation for this MOSFET is 24 W, allowing it to handle significant power loads.
This model operates within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
The maximum drain source resistance (Rds) is 17.8 mΩ, which helps minimize conduction losses.
It meets the automotive standard AEC-Q101, ensuring reliability in automotive applications.
The typical gate charge at the specified gate-source voltage is 9 nC, which aids in efficient switching.
This MOSFET is suitable for applications such as solenoid drivers, automotive engine controllers, and antilock braking systems.
The NVMFD5C470NL features two elements per chip, which helps reduce component count in designs.
The forward voltage for this model is 0.9 V, which contributes to its fast switching capabilities.
It features a Type N channel configuration, specifically designed for enhancement mode operation.
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