DiodesZetex Type P-Channel MOSFET 230 mA 100 V Enhancement 3-Pin E-Line ZVP2110A

DiodesZetex ZVP2110A is a P-Channel Enhancement Mode MOSFET transistor designed for semiconductor and electronic applications requiring moderate current handling and voltage ratings. Rated for a maximum continuous drain current of 230 mA and a maximum drain-source voltage of 100 V, this device fits through hole mounting on PCBs using its 3-pin E-Line package.

The device features low maximum drain-source resistance of 8 ohms, enabling efficient switching with minimal power loss. Operating temperature range spans from -55°C minimum to 150°C maximum, ensuring reliability under varying environmental conditions.

The maximum gate-source voltage rating of 20 V provides safe operation margins for switching circuits. With a maximum power dissipation of 700 mW, the MOSFET handles power efficiently without thermal stress under normal operating conditions. Its compact physical dimensions (length 4.77 mm, width 2.41 mm, height 4.01 mm) make it suitable for space-constrained designs.

This MOSFET complies with key automotive quality standards including AEC-Q101, AEC-Q104, AEC-Q100, and AEC-Q200, making it appropriate for automotive electronic applications as well as industrial and commercial electronics.

Commonly used in switching, amplification, and signal control circuits in consumer electronics, automotive systems, industrial controls, and embedded electronics, the ZVP2110A delivers dependable performance and durability.

Type P-channel MOSFET designed for through hole mount. Maximum continuous drain current of 230 milliamps ensures efficient current handling. Maximum drain-source voltage rating is 100 volts for robust operation. Features an enhancement mode Channel with low Rds(on) of 8 ohms.

Three-pin E-Line package type for easy PCB insertion. Operates within temperature range -55°C to 150°C for reliability. Maximum gate-source voltage rating of 20 volts. Maximum power dissipation of 700 mW allows stable power management.

Compact dimensions with length 4.77 mm, width 2.41 mm, height 4.01 mm. Complies with automotive standards AEC-Q101, AEC-Q104, AEC-Q100, and AEC-Q200. This MOSFET is an essential component for precision electronic designers requiring a rugged and reliable P-Channel transistor for switching and power control.

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