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Toshiba U-MOSVIII-H Type N-Channel MOSFET, 40A, 60V Enhancement, 8-Pin SOP TPH11006NL,LQ(S
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 0.95mm |
| Length | 5mm |
| Model | TPH11006NL,LQ(S |
| Width | 5mm |
| Mount Type | Surface |
| Series | U-MOSVIII-H |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 34W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhancement mode N-channel MOSFET supporting up to 40A continuous drain current.
- Designed for operation at a maximum drain-source voltage of 60V.
- Low drain-source resistance of 17mΩ for efficient switching.
- Compact 8-pin SOP surface mount package facilitating PCB integration.
- U-MOSVIII-H series optimized for high-speed switching and improved thermal management.
- Maximum power dissipation of 34W allows robust usage in power electronics.
- Typical gate charge of 23nC ensures responsive gate control.
- Suitable for use in industrial, automotive (non-qualified), and commercial electronics.
Product Description
Toshiba TPH11006NL,LQ(S) U-MOSVIII-H Type N-Channel MOSFET is engineered to deliver high performance and efficiency for a range of power electronics applications. This enhancement mode MOSFET supports a maximum drain current of 40A and operates at up to 60V drain-source voltage, making it suitable for demanding circuits requiring reliable switching.
Enhancement mode N-channel MOSFET supporting up to 40A continuous drain current. Designed for operation at a maximum drain-source voltage of 60V. Low drain-source resistance of 17mΩ for efficient switching. Compact 8-pin SOP surface mount package facilitating PCB integration.
U-MOSVIII-H series optimized for high-speed switching and improved thermal management. Maximum power dissipation of 34W allows robust usage in power electronics. Typical gate charge of 23nC ensures responsive gate control.
Suitable for use in industrial, automotive (non-qualified), and commercial electronics.
The device also features a channel mode of Enhancement, a maximum gate-source voltage of 20V, and forward voltage of -1.2V. Its operating temperature range up to 150°C and compact dimensions (5mm x 5mm x 0.95mm) make it highly adaptable for modern PCB layouts and power conversion solutions.
Designed for surface mount applications, this MOSFET is well-suited for integration into industrial, laboratory, and commercial power management circuits. With no automotive qualification, it is recommended for use outside strictly regulated automotive electronics but performs reliably in many industrial and consumer power switching environments.
Common use cases include power amplifiers, voltage regulation modules, switching networking devices, and motor driver circuits in manufacturing, test, HVAC, and energy management systems.
Explore Toshiba semiconductor solutions and more MOSFET devices in the EnvMart Electronics & Electricals category.
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Frequently Asked Questions
This enhancement mode N-channel MOSFET supports a maximum continuous drain current of 40A.
It is designed to operate at a maximum drain-source voltage of 60V.
The MOSFET features a low drain-source resistance of 17mΩ, allowing for efficient switching.
This model has compact dimensions of 5mm x 5mm x 0.95mm.
The typical gate charge is 23nC, ensuring responsive gate control.
It has a maximum power dissipation rating of 34W, suitable for robust usage in power electronics.
The maximum operating temperature is rated up to 150°C.
It comes in a compact 8-pin SOP (Small Outline Package) surface mount package.
It is suitable for use in industrial, automotive (non-qualified), and commercial electronics, including power amplifiers and motor driver circuits.
The forward voltage is -1.2V.
The maximum gate-source voltage is 20V.
The channel mode is Enhancement, which is typical for this type of MOSFET.
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