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Toshiba Type P-Channel MOSFET 4 A 30 V Enhancement 3-Pin SOT-23 SSM3J334R,LF(T
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 800μm |
| Length | 2.9mm |
| Model | SSM3J334R,LF(T |
| Width | 1.8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 136mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 5.9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type P channel for enhanced switching performance.
- Maximum continuous drain current of 4 amperes.
- Drain-source voltage rating of 30 volts.
- Compact SOT-23 3-pin surface mount package.
- Low drain-source resistance of 136 milliohms.
- Enhanced mode operation for efficient power management.
- Maximum power dissipation of 2 watts.
- Wide operating temperature range from -55°C to 150°C.
Product Description
Toshiba SSM3J334R,LF(T is a high performance Type P-Channel MOSFET designed with enhancement mode and optimized for surface mount applications in a compact 3-pin SOT-23 package. It provides a maximum continuous drain current of 4 amperes and a drain-source voltage rating of 30 volts for reliable switching and power management in electronic circuits.
This MOSFET features a low maximum drain-source resistance of 136 milliohms which ensures efficient conduction and minimal power loss during operation. Its maximum power dissipation rating of 2 watts enables it to handle moderate power levels safely within industrial and consumer electronics.
The device operates over a wide temperature range from -55°C to 150°C, making it suitable for demanding environments. The typical gate charge of 5.9 nanocoulombs at the specified gate-source voltage allows fast switching speeds and reduced switching losses.
With a maximum gate-source voltage rating of ±20 volts and a forward voltage of 1.2 volts, the MOSFET maintains robust switching characteristics and excellent control in various power applications.
Type P channel for enhanced switching performance. Maximum continuous drain current of 4 amperes. Drain-source voltage rating of 30 volts. Compact SOT-23 3-pin surface mount package. Low drain-source resistance of 136 milliohms.
Enhanced mode operation for efficient power management. Maximum power dissipation of 2 watts. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 5.9 nanocoulombs at gate-source voltage. Maximum gate-source voltage of ±20 volts.
Forward voltage drop of 1.2 volts ensures minimal power loss.
This MOSFET is ideal for use in power management, electronic switching, and signal amplification in industrial, consumer electronics, and communications applications. It is manufactured in Japan, ensuring high quality standards.
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Frequently Asked Questions
The maximum continuous drain current of this model is 4 amperes.
It has a drain-source voltage rating of 30 volts.
This model comes in a compact SOT-23 3-pin surface mount package.
The maximum power dissipation rating is 2 watts.
It operates over a wide temperature range from -55°C to 150°C.
The maximum gate-source voltage rating is ±20 volts.
The typical gate charge is 5.9 nanocoulombs at the specified gate-source voltage.
The forward voltage drop is 1.2 volts.
It features a low maximum drain-source resistance of 136 milliohms.
This model has a Type P channel, designed for enhanced switching performance.
It is manufactured in Japan, ensuring high quality standards.
The dimensions are 2.9mm in length, 1.8mm in width, and 800μm in height.
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