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Infineon HEXFET N-Channel MOSFET 190A 100V Enhancement TO-263 IRFS4010TRL7PP
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS4010TRL7PP |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 190A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 380W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 190A provides high current handling capacity.
- 100V maximum drain-source voltage suitable for diverse power electronics applications.
- Enhancement mode operation for efficient switching in advanced circuits.
- Low drain-source resistance of 4mΩ minimizes conduction losses.
- TO-263 package supports surface mounting and compact integration.
- Bulk power dissipation up to 380W for demanding applications.
- Wide operating temperature from -55°C to 175°C enables use in harsh environments.
- 8-pin configuration facilitates straightforward PCB placement.
Product Description
Infineon IRFS4010TRL7PP HEXFET N-Channel MOSFET is a robust, enhancement mode power transistor designed for high-current and high-voltage applications in industrial and commercial electronic systems. With a maximum drain current of 190A and a drain-source voltage of up to 100V, this device provides outstanding performance for demanding power switching operations.
The HEXFET series is renowned for its low on-resistance, with the IRFS4010TRL7PP offering a minimal 4 milliohm Rds(on), which significantly reduces conduction losses and improves system efficiency. The MOSFET operates in enhancement mode, offering fast switching and reliability, while its TO-263 surface-mount package is ideal for integration into compact layouts.
Rated for a maximum power dissipation of 380W, the IRFS4010TRL7PP supports applications ranging from motor control and power conversion to industrial automation, UPS systems, and high-performance DC-DC modules. Its wide operating temperature range from -55°C to 175°C means the component is well-suited for harsh environments, including industrial and laboratory equipment.
The 8-pin configuration simplifies both PCB layout and system connectivity. The improvement in gate charge at 150nC and robust gate-source voltage handling up to 20V underline the suitability of the device for efficient, reliable switching in sophisticated power management designs.
190A continuous drain current and 100V drain-source voltage for high-power uses. TO-263 surface-mount package facilitates installation and system thermal management. HEXFET series ensures excellent conduction and switching efficiency.
Enhancement mode operation for precise, reliable power control. Industrial, laboratory, and automation applications benefit from wide temperature tolerance. 8-pin configuration streamlines PCB integration for electronics and embedded systems.
Engineers and designers working in the domains of power electronics, industrial automation, and high-efficiency energy systems will find the Infineon IRFS4010TRL7PP MOSFET ideal for projects requiring robust performance and advanced reliability. Browse further in the EnvMart MOSFET and Discrete Semiconductor categories to discover more high-performance solutions from Infineon.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon IRFS4010TRL7PP MOSFET is 190A, allowing for high current handling capacity in power applications.
This model has a maximum drain-source voltage rating of 100V, making it suitable for various power electronics applications.
The drain-source resistance (Rds(on)) for this MOSFET is 4mΩ, which helps minimize conduction losses and improve efficiency.
The IRFS4010TRL7PP can handle a maximum power dissipation of 380W, suitable for demanding applications.
It operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
The device is housed in a TO-263 package, which supports surface mounting for compact integration.
This MOSFET features an 8-pin configuration, facilitating straightforward PCB placement and connectivity.
The typical gate charge (Qg) at Vgs is 150nC, which contributes to its efficient switching capabilities.
This MOSFET is suitable for applications including motor control, power conversion, industrial automation, and UPS systems.
The maximum gate-source voltage (Vgs) for this model is 20V, ensuring reliable operation in various circuits.
It features an N-channel type, which is commonly used for enhancement mode operation in power electronics.
The country of origin for this MOSFET is India.
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