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Infineon DirectFET Type N-Channel MOSFET, 198A, 40V, Enhancement, 96W, MX Package, 4-Pin IRF7946TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.53mm |
| Length | 6.35mm |
| Model | IRF7946TRPBF |
| Width | 5.05mm |
| Mount Type | Surface |
| Series | DirectFET |
| Maximum Operating Temperature | 150°C |
| Package Type | MX |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 198A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 141nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- 198A maximum continuous drain current for robust power handling.
- 40V maximum drain-source voltage suitable for low to medium voltage applications.
- DirectFET MX surface-mount package with 4 pins, optimized for thermal management.
- Enhancement mode N-channel configuration for efficient switching.
- Ultra-low 1.4mΩ drain-source resistance reduces conduction losses.
- 96W maximum power dissipation for industrial and commercial circuits.
- Typical gate charge of 141nC at Vgs for fast operation.
- Operating temperature range from -55°C to 150°C.
Product Description
Infineon IRF7946TRPBF DirectFET Type N-Channel MOSFET delivers exceptional performance for demanding power applications. Designed in a compact MX surface-mount package, this device features a maximum continuous drain current of 198A and a drain-source voltage rating of 40V, making it ideal for both industrial and commercial uses.
The enhancement mode N-channel configuration allows for efficient, rapid switching, essential for modern inverter, motor drive, and battery management circuits. With its ultra-low 1.4mΩ drain-source resistance, the IRF7946TRPBF minimizes conduction losses, thereby maximizing efficiency in high-current scenarios.
The DirectFET MX package, with 4 pins, is optimized for improved thermal performance and ease of integration onto PCBs. Its 96W maximum power dissipation supports a broad range of applications, from power tools and industrial controllers to precision laboratory equipment.
Gate charge at Vgs is 141nC, facilitating fast switching speeds, while the forward voltage Vf of 1.2V ensures low voltage drop during operation. The MOSFET operates reliably across extreme temperatures, from -55°C up to 150°C, offering versatility in challenging environments.
198A current handling for high-power loads. 40V operation suitable for many low and mid-voltage scenarios. DirectFET surface-mount package improves heat dissipation and PCB space efficiency. Enhancement mode N-channel design benefits rapid switching and high efficiency.
Low Rds(on) and high power dissipation increase robustness in industrial settings.
Use cases include industrial automation, motor controls, power supplies, battery management systems, and advanced laboratory electronics. Its rugged design and advanced thermal properties make it an excellent choice for applications requiring reliability, efficiency, and compact packaging.
Browse more Infineon MOSFETs and discrete semiconductors at EnvMart for solutions in power management, switching, and circuit protection.
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Frequently Asked Questions
The maximum continuous drain current for this model is 198A, allowing for robust power handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 40V, making it suitable for low to medium voltage applications.
It comes in a DirectFET MX surface-mount package with 4 pins, optimized for thermal management and PCB integration.
The typical gate charge at Vgs for this MOSFET is 141nC, facilitating fast operation and switching speeds.
This model supports a maximum power dissipation of 96W, suitable for industrial and commercial circuits.
The ultra-low drain-source resistance is 1.4mΩ, which helps reduce conduction losses and improve efficiency.
It operates reliably within a temperature range of -55°C to 150°C, making it versatile for various environments.
This MOSFET is suitable for applications such as industrial automation, motor controls, power supplies, and battery management systems.
The forward voltage (Vf) for this model is 1.2V, ensuring a low voltage drop during operation.
The dimensions of this model are 6.35mm in length, 5.05mm in width, and 0.53mm in height.
It features an enhancement mode N-channel configuration, which is beneficial for efficient switching applications.
The maximum gate-source voltage (Vgs) for this model is 20V, which is important for ensuring proper operation.
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