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Infineon HEXFET N-Channel MOSFET, 100A 60V, Enhancement Mode, PQFN-8 IRFH5006TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.85mm |
| Length | 6mm |
| Model | IRFH5006TRPBF |
| Width | 5mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 69nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Provides a maximum continuous drain current of 100A.
- Operates at a maximum drain source voltage of 60V.
- Utilizes HEXFET technology for low conduction losses.
- Surface mount PQFN package with 8 pins for compact PCB layout.
- Enhancement mode for efficient switching performance.
- Features low drain-source resistance of 4.1mΩ aiding power density.
- Gate-source voltage max is 20V, supporting robust gate drive.
- Maximum power dissipation is 156W for reliable operations.
Product Description
Infineon IRFH5006TRPBF is a HEXFET N-Channel MOSFET designed to deliver outstanding performance for demanding industrial and power electronics applications. With a maximum drain current of 100A and a maximum drain-source voltage of 60V, this enhancement-mode device offers high efficiency and power density. The PQFN-8 surface mount package provides a compact footprint suitable for modern PCB layouts in space-constrained designs.
Utilizing Infineon's advanced HEXFET technology, the IRFH5006TRPBF achieves extremely low drain-source resistance (Rds(on)), resulting in reduced conduction losses. Typical applications include DC-DC converters, high-current switching power supplies, motor drivers, and renewable energy systems where reliable and efficient operation is essential.
Provides a maximum continuous drain current of 100A. Operates at a maximum drain source voltage of 60V. Utilizes HEXFET technology for low conduction losses. Surface mount PQFN package with 8 pins for compact PCB layout.
Enhancement mode for efficient switching performance. Features low drain-source resistance of 4.1mΩ aiding power density. Gate-source voltage max is 20V, supporting robust gate drive. Maximum power dissipation is 156W for reliable operations.
Supports a wide temperature range from -55°C to 150°C.
Industry sectors including power supplies, industrial controls, automotive systems (non-qualified), and renewable energy benefit from integrating this device for its efficiency and reliability. The MOSFET is suitable for surface-mount processes, improving assembly speed and quality in manufacturing environments.
The IRFH5006TRPBF is backed by Infineon's commitment to innovation and quality, making it a trusted choice for engineers and designers seeking high-performance solutions. Explore the full range of Infineon MOSFETs and related semiconductor devices in the EnvMart Electronics & Electricals category to meet all your power management requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100A.
It operates at a maximum drain-source voltage of 60V.
This model utilizes a PQFN package type with 8 pins, suitable for surface mount applications.
The device features a low drain-source resistance of 4.1mΩ, which aids in reducing conduction losses.
The maximum power dissipation for this MOSFET is 156W.
It supports a wide operating temperature range from -55°C to 150°C.
The maximum gate-source voltage for this model is 20V.
Typical applications include DC-DC converters, high-current switching power supplies, motor drivers, and renewable energy systems.
The typical gate charge at Vgs is 69nC.
This model has dimensions of 6mm in length, 5mm in width, and a height of 0.85mm.
It is an N-channel type MOSFET, utilizing enhancement mode for efficient switching performance.
The country of origin for this MOSFET is India.
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