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Infineon CoolMOS CE Type N-Channel MOSFET, 14.1A, 550V, Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model IPD50R380CEAUMA1
Width 6.22mm
Mount Type Surface
Series CoolMOS CE
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 14.1A
Maximum Drain Source Voltage Vds 550V
Maximum Drain Source Resistance Rds 380mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 98W
Typical Gate Charge Qg @ Vgs 24.8nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 0.85V

Key Features

  • Features a maximum continuous drain current of 14.1A.
  • Drain source voltage rated at 550V, suitable for demanding power supplies.
  • TO-252 package, surface mount, and 3-pin configuration for easy PCB integration.
  • CoolMOS CE series delivers low resistance and optimized switching performance.
  • Supports maximum power dissipation up to 98W.
  • Typical gate charge of 24.8nC enables fast switching.
  • Operates over a wide temperature range from -55°C to 150°C.
  • Forward voltage of 0.85V and maximum gate source voltage of 30V.

Product Description

Infineon IPD50R380CEAUMA1 CoolMOS CE Type N-Channel MOSFET is engineered for high-performance power conversion, switching, and control in industrial and commercial electronics. This surface-mount MOSFET, housed in a TO-252 package with 3 pins, offers a maximum continuous drain current of 14.1A and a drain source voltage rating of 550V. Its enhancement channel mode ensures efficient operation and reliability across a wide temperature range.

Designed for high-efficiency power switching in industrial, power supply, and inverter applications. CoolMOS CE series excels in reducing on-state resistance and improving power density. Maximum drain source resistance is 380mΩ for minimized conduction losses.

Offers fast switching with a typical gate charge of 24.8nC at Vgs. Supports up to 98W dissipation, making it suitable for robust designs. Wide operating temperature range from -55°C to 150°C ensures versatility. Forward voltage Vf of 0.85V, enhancing low voltage performance.

Maximum gate source voltage Vgs is 30V for flexible control.

Ideal for use in switching power supplies, industrial automation, motor drives, and renewable energy systems where reliable, efficient MOSFET performance is critical. The device's surface mount TO-252 format and compact dimensions (length 6.73mm, width 6.22mm, height 2.41mm) enable convenient integration into circuit boards.

Industrial applications include electronic power supplies, inverter circuits, motor controllers, and battery management systems. Its high voltage and current ratings make it suitable for demanding environments in manufacturing, laboratory instrumentation, and commercial devices.

The Infineon CoolMOS CE N-Channel MOSFET IPD50R380CEAUMA1 represents superior Infineon design and quality. Browse EnvMart for more advanced MOSFETs and semiconductor components by Infineon.

Infineon CoolMOS CE Type N-Channel MOSFET, 14.1A, 550V, Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 14.1A.

It has a maximum drain source voltage rating of 550V.

This MOSFET is housed in a TO-252 package, which is a surface mount type.

The typical gate charge at Vgs is 24.8nC, enabling fast switching.

It supports a maximum power dissipation of 98W.

The operating temperature range is from -55°C to 150°C.

The dimensions are 6.73mm in length, 6.22mm in width, and 2.41mm in height.

The maximum gate source voltage is 30V.

The forward voltage is 0.85V.

This model is a Type N-channel MOSFET.

The maximum drain source resistance is 380mΩ.

It is suitable for applications in switching power supplies, industrial automation, motor drives, and renewable energy systems.

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