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Infineon N-Channel MOSFET 55A 25V 2.4mΩ PQFN 6-Pin ISK024NE2LM5
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISK024NE2LM5 |
| Mount Type | Surface |
| Series | ISK |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 2.4mΩ |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 0.81V |
Key Features
- Delivers a continuous drain current of 55A at a drain-source voltage of 25V.
- Low RDSon of 2.4mΩ ensures minimal conduction losses.
- Surface mount PQFN package with 6 pins supports compact PCB layouts.
- Operates reliably from -55°C to 150°C for wide temperature adaptability.
- RoHS compliant and automotive standard AEC-Q101 certified.
- Gate-source voltage rating up to 30V and maximum power dissipation of 171W.
- Typical gate charge of 80nC supports fast switching applications.
Product Description
Infineon ISK024NE2LM5 N-Channel MOSFET is engineered for high efficiency and low power loss in demanding applications. This MOSFET features a continuous drain current capability of 55A at a 25V drain-source voltage, making it ideal for power delivery and switching tasks in electronics, automotive systems, and compact DC/DC converters.
The PQFN 2x2 6-pin surface-mount package brings industry-leading miniaturization (footprint of 4 mm²) and thermal performance. A low drain-source resistance of 2.4mΩ significantly reduces conduction losses, promoting efficient operation even in load switch and high-current applications.
Full automotive standard AEC-Q101 compliance ensures robust performance and reliability in harsh environments, making it suitable for automotive, industrial, and consumer electronics. Operating temperatures span from -55°C to 150°C, supporting use in both extreme cold and hot conditions.
The maximum power dissipation of 171W, combined with a high gate-source voltage rating (30V), enhances application versatility. A typical gate charge of 80nC is well suited for designs requiring fast switching and reduced switching losses, key for wireless charging circuits and high-performance DC/DC applications.
Delivers a continuous drain current of 55A at a drain-source voltage of 25V. Low RDSon of 2.4mΩ ensures minimal conduction losses. Surface mount PQFN package with 6 pins supports compact PCB layouts. Operates reliably from -55°C to 150°C for wide temperature adaptability.
RoHS compliant and automotive standard AEC-Q101 certified. Gate-source voltage rating up to 30V and maximum power dissipation of 171W. Typical gate charge of 80nC supports fast switching applications.
The Infineon ISK024NE2LM5 is ideal for industrial, automotive, wireless charging, load switches, and compact DC/DC converter projects. Browse more N-channel MOSFETs and explore Infineon's range on EnvMart for advanced solutions in semiconductor power management.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55A.
It can handle a maximum drain-source voltage of 25V.
The RDS(on) value is 2.4mΩ, which helps minimize conduction losses.
This unit operates reliably within a temperature range of -55°C to 150°C.
The typical gate charge is 80nC, making it suitable for fast switching applications.
The maximum power dissipation is rated at 171W.
It uses a PQFN package type, which supports surface mounting and compact PCB layouts.
Yes, it is RoHS compliant and meets the automotive standard AEC-Q101.
The maximum gate-source voltage rating is 30V.
This model has 6 pins.
It is suitable for applications in power delivery, automotive systems, and compact DC/DC converters.
The country of origin for this MOSFET is India.
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