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Infineon OptiMOS Type N-Channel MOSFET 433A 30V 8-Pin TDSON BSC005N03LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC005N03LS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 433A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5.5mΩ |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- N-channel structure provides high efficiency for switching applications.
- Supports a continuous drain current of up to 433A.
- Withstands a maximum drain-source voltage of 30V for robust operations.
- Low on-resistance of only 5.5mΩ minimizes energy loss and heating.
- Offers 188W maximum power dissipation for demanding industrial scenarios.
- Surface-mount TDSON package enables compact power circuitry.
- Supports operations across a wide temperature range (-55°C to 175°C).
- 8-pin configuration suits modern SMT assembly lines and dense layouts.
Product Description
The Infineon BSC005N03LS5ATMA1 is an OptiMOS Type N-Channel MOSFET engineered to provide exceptional current handling and power switching capability in advanced electronic designs. Featuring a maximum continuous drain current of 433A and a drain-source voltage of up to 30V, this device is suited for high-performance and high-efficiency power management in industrial, telecom, and server environments.
Its 8-pin TDSON surface-mount package enables easy integration into densely packed PCBs, while the low Rds(on) value of just 5.5mΩ ensures minimal conduction loss, reducing heat generation and promoting efficient energy conversion. Designed for rugged environments, this MOSFET can operate reliably across an extended temperature range from -55°C to 175°C, catering to demanding industrial thermal requirements.
The maximum power dissipation rating of 188W supports heavy-duty applications such as DC-DC converters, server power rails, battery management, power distribution, and motor drive circuits requiring exceptional current delivery and thermal management capacity.
Other key specifications include a ±20V gate-source voltage margin for flexible gate drive circuit design, a typical gate charge of 59nC, and forward voltage of 1V, supporting predictable switching characteristics and high-frequency operation. The device’s 8-pin format with surface mounting is ideal for automated assembly and thermal stress control in modern electronics manufacturing.
N-channel design with 433A continuous drain current and 30V drain-source voltage. Extremely low on-resistance (5.5mΩ) enhances thermal performance and system efficiency. TDSON package structure facilitates compact PCB layouts and effective thermal management.
Suitable for use in high current DC-DC converters, server power circuits, and motor drives. Can withstand -55°C to 175°C operating temperature and up to 20V gate-source voltage. Max power dissipation of 188W for substantial load switching capabilities.
Supports automated surface-mount technology assembly processes.
This MOSFET is ideal for industrial, server, telecom, motor drive, battery management, and automotive power electronics applications requiring maximum current and robust reliability.
Browse more Infineon OptiMOS MOSFETs and advanced power management solutions in the MOSFET section on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 433A.
It can withstand a maximum drain-source voltage of 30V.
The on-resistance (Rds(on)) is 5.5mΩ, which minimizes energy loss and heating.
The maximum power dissipation rating is 188W, suitable for demanding industrial applications.
This device operates reliably across a wide temperature range from -55°C to 175°C.
It comes in an 8-pin TDSON surface-mount package, facilitating compact PCB layouts.
The typical gate charge (Qg) at Vgs is 59nC.
The maximum gate-source voltage is ±20V, allowing for flexible gate drive circuit design.
The forward voltage (Vf) is 1V.
It is suitable for applications such as DC-DC converters, server power circuits, and motor drives.
The dimensions are 5.49mm in length, 6.35mm in width, and 1.1mm in height.
This model features an N-channel structure, which provides high efficiency for switching applications.
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