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Infineon CoolMOS Type N-Channel MOSFET 9A 650V Enhancement 3-Pin TO-220 IPA60R180C7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R180C7XKSA1 |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
Key Features
- Designed as a Type N-Channel enhancement mode MOSFET.
- Maximum continuous drain current is 9A, suitable for high-power switching.
- Maximum drain-source voltage rated at 650V for robust performance.
- TO-220 package and 3-pin surface mount configuration for easy PCB installation.
- Features CoolMOS super junction technology, improving efficiency and reducing power loss.
- Low RDS(on) value of 180mΩ enhances energy savings and thermal response.
- Qualified to JEDEC standards for reliability in commercial and industrial applications.
- Supports reverse conduction and low gate/output charge for superior commutation ruggedness.
Product Description
Infineon IPA60R180C7XKSA1 CoolMOS Type N-Channel MOSFET combines advanced super junction technology for high voltage power applications. This device is engineered to deliver 9A of continuous drain current with a maximum drain-source voltage of 650V, making it ideal for demanding switching environments such as power supplies, motor drivers, and industrial electronics.
Designed as a Type N-Channel enhancement mode MOSFET for efficient switching. Supports a maximum drain current of 9A, ideal for medium to high power circuits. 650V maximum drain-source voltage ensures safety and reliability in high-voltage scenarios.
TO-220 package form factor with three pins and surface mounting is compatible with standard PCB layout. CoolMOS technology reduces RDS(on) to 180mΩ, minimizing heat generation and maximizing performance. Low gate and output charges result in faster switching times and improved commutation ruggedness.
Reverse conduction capability provides additional versatility for complex power designs. Certified to standard grade JEDEC reliability standards for commercial and industrial usage.
Applications include industrial automation equipment, AC/DC converters, motor control units, power management modules, and energy-efficient electronics. Its robust design makes it suitable for laboratories, manufacturing environments, and advanced electronics engineering.
Infineon is renowned for pioneering CoolMOS super junction technology, which pushes the boundaries in power semiconductors. The IPA60R180C7XKSA1 reflects their commitment to quality, reliability, and innovative performance.
Explore more MOSFETs and semiconductor solutions on EnvMart from Infineon and other leading brands for your next industrial or electronic design project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9A, making it suitable for medium to high power circuits.
This device has a maximum drain-source voltage rating of 650V, ensuring safety and reliability in high-voltage applications.
It comes in a TO-220 package type, which is designed for surface mounting on PCBs.
The RDS(on) value for this MOSFET is 180mΩ, which helps minimize heat generation and improve efficiency.
This model features CoolMOS super junction technology, which enhances efficiency and reduces power loss during operation.
It is a Type N-Channel enhancement mode MOSFET, designed for efficient switching applications.
This device is suitable for applications such as power supplies, motor drivers, industrial automation equipment, and energy-efficient electronics.
The IPA60R180C7XKSA1 has a total of 3 pins, which is typical for its TO-220 package configuration.
It supports reverse conduction capability, which adds versatility for complex power designs in various applications.
The country of origin for this MOSFET is India.
This model is qualified to JEDEC standards, which indicates its reliability for commercial and industrial applications.
This MOSFET is designed for surface mounting, making it compatible with standard PCB layouts.
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