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Infineon HEXFET N-Channel MOSFET 31A 100V Enhancement TO-252 IRFR3410TRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFR3410TRLPBF |
| Width | 2.39mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 31Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- 31A maximum continuous drain current for high-power switching applications.
- 100V maximum drain-source voltage enables operation in demanding environments.
- TO-252 surface-mount package with 3-pin configuration ensures easy integration.
- HEXFET technology provides fast switching and low losses for efficient performance.
- Enhancement channel mode for standard MOSFET operation.
- Suitable for DC-DC converters and high frequency circuits.
- 55°C to 175°C wide operating temperature range supports industrial and commercial electronics.
- RoHS compliant for safe and environmentally-friendly design.
Product Description
Infineon IRFR3410TRLPBF is a HEXFET series N-Channel power MOSFET designed for demanding power electronics applications. This device supports a maximum continuous drain current of 31A and a drain-source voltage of up to 100V, making it highly suitable for high-frequency DC-DC converters, motor drives, power management, and industrial automation systems. With its enhancement channel mode, the MOSFET ensures reliable switching and control in surface-mount designs, featuring the TO-252 (DPAK) package for compact PCB integration.
The HEXFET technology stands out for fast switching speeds and low losses, providing efficient operation across a wide temperature range from -55°C to 175°C. The 3-pin TO-252 package simplifies mounting on power circuit boards and ensures robust electrical connectivity. Its maximum drain-source resistance of 31 mΩ, combined with a typical gate charge of 56nC and a gate-source voltage of up to 20V, delivers responsive control and thermal stability for both industrial and commercial electronics.
31A maximum drain current supports high power switching. 100V drain-source voltage for typical industrial supply voltages. Low Rds(on) HEXFET design enhances system efficiency. Compact TO-252 DPAK surface-mount form factor.
175°C maximum temperature rating suitable for harsh environments. Gate charge optimized for fast switching applications. Supports enhancement mode operation for precise control. RoHS compliant for safety and environmental standards.
Typical use cases include switching regulators, industrial power supplies, solar inverters, motor control drives, and high-frequency DC-DC converters. The device can be used across industrial, manufacturing, laboratory, and commercial electronics. Designed for easy integration in modern PCB layouts, it offers reliability and electrical performance for advanced engineering needs.
Explore more HEXFET MOSFETs and power electronics devices from Infineon in the EnvMart electronics catalogue to match your project requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31A, making it suitable for high-power switching applications.
The IRFR3410TRLPBF has a maximum drain-source voltage of 100V, which allows it to operate in demanding environments.
This MOSFET comes in a TO-252 surface-mount package, which features a 3-pin configuration for easy integration.
It operates within a wide temperature range of -55°C to 175°C, making it suitable for both industrial and commercial electronics.
The maximum power dissipation for the IRFR3410TRLPBF is 110W, which supports its use in high-power applications.
The typical gate charge at a gate-source voltage of 10V is 56nC, which is optimized for fast switching applications.
The dimensions of this MOSFET are 6.73mm in length, 2.39mm in width, and 6.22mm in height.
The IRFR3410TRLPBF features an N-channel type, which is standard for enhancement mode MOSFET operation.
The maximum gate-source voltage for the IRFR3410TRLPBF is 20V, allowing for responsive control.
This model is suitable for applications such as DC-DC converters, motor drives, and industrial power supplies.
The maximum drain-source resistance for the IRFR3410TRLPBF is 31 mΩ, contributing to its efficiency in power management.
Yes, this MOSFET is RoHS compliant, ensuring it meets safety and environmental standards.
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