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Vishay E Type N-Channel MOSFET, 8A, 800V, Enhancement Mode, TO-263, 3-Pin SIHB11N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.06mm |
| Length | 14.61mm |
| Model | SIHB11N80AE-GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 391mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 42nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Operates at a maximum drain source voltage of 800V.
- Supports continuous drain current up to 8A.
- Surface mount package type TO-263 with 3 pins for quick PCB integration.
- Low drain source resistance of 391mΩ enables efficient conduction.
- Enhancement mode operation allows precise switching control.
- Wide operating temperature from -55°C to 150°C for industrial reliability.
- Gate charge is typically 42nC at Vgs, optimizing switching losses.
- Maximum gate source voltage is 30V for robust input tolerance.
Product Description
Vishay SIHB11N80AE-GE3 E Type N-Channel MOSFET is designed for advanced power electronics applications requiring high voltage and efficient switching performance. With a maximum drain source voltage (Vds) of 800V and continuous drain current (Id) of up to 8A, this enhancement mode MOSFET is suited for demanding industrial, commercial, and electronic environments.
The device features a TO-263 (D2PAK) surface mount package with 3 pins, facilitating ease of installation onto PCBs, while ensuring reliable performance and compact layout. Its low drain source resistance of 391mΩ ensures minimal conduction losses, contributing to energy-efficient designs.
Operates at a maximum drain source voltage of 800V. Supports continuous drain current up to 8A. Surface mount package type TO-263 with 3 pins for quick PCB integration. Low drain source resistance of 391mΩ enables efficient conduction.
Enhancement mode operation allows precise switching control. Wide operating temperature from -55°C to 150°C for industrial reliability. Gate charge is typically 42nC at Vgs, optimizing switching losses. Maximum gate source voltage is 30V for robust input tolerance.
Typical gate charge (Qg) is 42nC at Vgs, which results in reduced switching and conduction losses. The device is avalanche energy rated and includes integrated Zener diode ESD protection, making it robust for industrial power supply, motor drivers, and inverter circuits.
With maximum power dissipation of 78W and dimensions (LxWxH) of 14.61mm x 9.65mm x 4.06mm, this MOSFET fits into tight spaces and delivers high reliable operation across a wide temperature range from -55°C to 150°C.
This Vishay power MOSFET is ideal for industrial automation, power factor correction, motor control, high-voltage switching, and renewable energy inverter applications. Engineers and designers can leverage its low figure-of-merit (Ron x Qg), low effective capacitance, and integrated ESD protection for creating robust and efficient systems.
Explore more Vishay MOSFETs and discrete semiconductors in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum drain source voltage (Vds) for this model is 800V.
This MOSFET supports a continuous drain current of up to 8A.
It is packaged in a TO-263 surface mount type with 3 pins, facilitating easy integration onto PCBs.
The operating temperature range for this model is from -55°C to 150°C.
The typical gate charge (Qg) at Vgs is 42nC, which helps optimize switching losses.
The maximum power dissipation for this model is 78W.
It has a low drain source resistance of 391mΩ, which enables efficient conduction.
The maximum gate source voltage (Vgs) is 30V, providing robust input tolerance.
The dimensions of this model are 14.61mm in length, 9.65mm in width, and 4.06mm in height.
Yes, this device is avalanche energy rated and includes integrated Zener diode ESD protection for enhanced robustness.
It features an N-channel type, which is suitable for enhancement mode operation.
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