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DiodesZetex Dual N-Channel Enhancement MOSFET 30.2A 40V, 8-Pin PowerDI3333 DMT47

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.85mm
Length 3.4mm
Model DMT47
Width 3.4mm
Mount Type Surface
Series DMT47
Maximum Operating Temperature 150°C
Package Type PowerDI3333
Minimum Operating Temperature -55°C
Standards/Approvals RoHS, UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101
Pin Count 8
Number of Elements per Chip 1
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 30.2A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.015Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 14.8W
Typical Gate Charge Qg @ Vgs 6.72nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.9V
Transistor Configuration Dual

Key Features

  • Delivers a maximum continuous drain current of 30.2A.
  • Supports a maximum drain-source voltage of 40V.
  • Low RDS(ON) of only 0.015 Ω for efficient power management.
  • Compact and thermally efficient PowerDI3333 surface-mount package for modern PCB designs.
  • Dual N-channel enhancement mode for high-speed switching applications.
  • Operates efficiently across a wide range from -55°C to 150°C.
  • Complies with automotive AEC-Q101 standard and RoHS requirements.
  • Ideal for high-efficiency DC-DC converters, power management, and switching use cases.

Product Description

The DiodesZetex DMT47M2LDV-7 is a high-performance dual N-channel enhancement mode MOSFET specifically designed for efficient power switching and management applications. Housed in a compact 8-pin PowerDI3333 surface-mount package, this device provides designers with a component that delivers both high current capability and robust voltage handling. Offering a maximum continuous drain current of 30.2A and withstanding drain-source voltages up to 40V, the DMT47M2LDV-7 ensures reliable power switching in a range of demanding circuit designs.

One of the principal advantages of this MOSFET is its low on-resistance (RDS(ON)) of just 0.015 Ω, which helps reduce conduction losses and increases system efficiency, especially in DC-DC conversion and power supply circuits. The enhancement mode operation coupled with fast switching characteristics supports efficient high-frequency operations required in modern power electronics.

With a gate-source voltage tolerance up to 20V and a typical gate charge of 6.72nC, the device is well-suited for rapid switching cycles, enabling designers to meet the stringent timing demands often found in power management ICs and motor control systems. The thermal power dissipation rating of 14.8W enables sustained performance even under significant electrical and thermal stress.

The transistor configuration is dual, allowing two independent MOSFETs per chip, making it highly versatile for parallel switching or H-bridge applications. Its reliable operation across a broad temperature spectrum (-55°C to 150°C) and compliance with automotive and quality testing standards such as AEC-Q101, UL 94V-0, and MIL-STD-202 further assures suitability for automotive, industrial, and consumer electronics.

Key construction features include an overall size (length and width) of 3.4mm, with a low height profile of 0.85mm, optimizing board space and allowing integration into densely populated assemblies. The device is fully RoHS compliant, reinforcing its use in environmentally responsible manufacturing.

Practical use cases include switching circuits in power management modules, battery chargers, DC-DC converters, load switches, motor drive subsystems, and any scenario requiring highly efficient, rapid switching capabilities in a modern electronic design.

The DiodesZetex DMT47M2LDV-7 is a robust solution for engineers seeking reliable, space-saving, and high-efficiency N-channel MOSFETs for powering next-generation electronic products in industrial, automotive, and commercial applications. Explore more solutions in the MOSFETs category or browse other DiodesZetex components on EnvMart.

DiodesZetex Dual N-Channel Enhancement MOSFET 30.2A 40V, 8-Pin PowerDI3333 DMT47
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Frequently Asked Questions

The maximum continuous drain current for this model is 30.2A.

It supports a maximum drain-source voltage of 40V.

The on-resistance (RDS(ON)) is 0.015 Ω, which helps in efficient power management.

The device has a length and width of 3.4mm and a height of 0.85mm.

It operates efficiently across a temperature range from -55°C to 150°C.

This model is housed in a compact 8-pin PowerDI3333 surface-mount package.

It complies with the automotive AEC-Q101 standard.

The maximum power dissipation rating is 14.8W.

The typical gate charge at Vgs is 6.72nC.

It is ideal for high-efficiency DC-DC converters, power management, and switching applications.

This device features a dual configuration, allowing for two independent MOSFETs per chip.

It is compliant with RoHS, UL 94V-0, J-STD-020, and MIL-STD-202 standards.

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