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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.85mm |
| Length | 3.4mm |
| Model | DMT47 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | DMT47 |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101 |
| Pin Count | 8 |
| Number of Elements per Chip | 1 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 30.2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.015Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 14.8W |
| Typical Gate Charge Qg @ Vgs | 6.72nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
| Transistor Configuration | Dual |
The DiodesZetex DMT47M2LDV-7 is a high-performance dual N-channel enhancement mode MOSFET specifically designed for efficient power switching and management applications. Housed in a compact 8-pin PowerDI3333 surface-mount package, this device provides designers with a component that delivers both high current capability and robust voltage handling. Offering a maximum continuous drain current of 30.2A and withstanding drain-source voltages up to 40V, the DMT47M2LDV-7 ensures reliable power switching in a range of demanding circuit designs.
One of the principal advantages of this MOSFET is its low on-resistance (RDS(ON)) of just 0.015 Ω, which helps reduce conduction losses and increases system efficiency, especially in DC-DC conversion and power supply circuits. The enhancement mode operation coupled with fast switching characteristics supports efficient high-frequency operations required in modern power electronics.
With a gate-source voltage tolerance up to 20V and a typical gate charge of 6.72nC, the device is well-suited for rapid switching cycles, enabling designers to meet the stringent timing demands often found in power management ICs and motor control systems. The thermal power dissipation rating of 14.8W enables sustained performance even under significant electrical and thermal stress.
The transistor configuration is dual, allowing two independent MOSFETs per chip, making it highly versatile for parallel switching or H-bridge applications. Its reliable operation across a broad temperature spectrum (-55°C to 150°C) and compliance with automotive and quality testing standards such as AEC-Q101, UL 94V-0, and MIL-STD-202 further assures suitability for automotive, industrial, and consumer electronics.
Key construction features include an overall size (length and width) of 3.4mm, with a low height profile of 0.85mm, optimizing board space and allowing integration into densely populated assemblies. The device is fully RoHS compliant, reinforcing its use in environmentally responsible manufacturing.
Practical use cases include switching circuits in power management modules, battery chargers, DC-DC converters, load switches, motor drive subsystems, and any scenario requiring highly efficient, rapid switching capabilities in a modern electronic design.
The DiodesZetex DMT47M2LDV-7 is a robust solution for engineers seeking reliable, space-saving, and high-efficiency N-channel MOSFETs for powering next-generation electronic products in industrial, automotive, and commercial applications. Explore more solutions in the MOSFETs category or browse other DiodesZetex components on EnvMart.
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