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Wolfspeed N-Channel SiC MOSFET 72A 1700V TO-247 Enhancement Mode C2M0045170D

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Wolfspeed N-Channel SiC MOSFET 72A 1700V TO-247 Enhancement Mode C2M0045170D

Name: Wolfspeed N-Channel SiC MOSFET 72A 1700V TO-247 Enhancement Mode C2M0045170D
Brand: Wolfspeed
SKU: 83336
Price: 157.42 USD
Availability: InStock

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Category MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin	India
Brand	Wolfspeed
Height	21.1mm
Length	16.13mm
Model	C2M0045170D
Width	5.21mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	72A
Maximum Drain Source Voltage Vds	1700V
Maximum Drain Source Resistance Rds	45mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	520W
Typical Gate Charge Qg @ Vgs	188nC
Maximum Gate Source Voltage Vgs	25V
Forward Voltage Vf	4.1V

Key Features

Industry-leading silicon carbide technology for high switching efficiency.
Supports 72A continuous drain current for demanding applications.
1700V maximum drain-source voltage ensures compatibility with high-voltage systems.
Enhancement mode operation enables easy integration in modern designs.
Low 45mΩ maximum resistance for improved efficiency and reduced losses.
Designed for through-hole mounting and features a 3-pin TO-247 package.
Operates reliably from - 40°C to 150°C for wide temperature range usage.
Fast switching and avalanche ruggedness ideal for renewable energy inverters, industrial power supplies, and battery charging systems.

Product Description

The Wolfspeed C2M0045170D is a state-of-the-art N-Channel silicon carbide (SiC) MOSFET engineered for high-frequency power conversion and switching applications. Featuring a 72A maximum continuous drain current and a high blocking voltage of 1700V, this MOSFET is designed to support advanced power electronics solutions, including topologies for renewable-energy inverters, battery charging systems, and three-phase industrial power supplies.

Utilizing Wolfspeed's advanced SiC technology, the C2M0045170D offers superior switching efficiency, rugged avalanche capability, and fast intrinsic diodes with low reverse recovery charge. The enhancement mode operation streamlines circuit integration and allows for straightforward control in modern designs.

The device’s low resistance of 45mΩ ensures reduced conduction losses and delivers improved overall system efficiency. The TO-247 package and through-hole mounting facilitate ease of assembly into high-power modules and boards, while its robust thermal performance enables reliable operation across challenging environments with operating temperatures from - 40°C up to 150°C.

Additional technical features include a maximum gate-source voltage of 25V, forward voltage of 4.1V, and a typical gate charge of 188nC. With overall dimensions of 16.13mm length, 5.21mm width, and 21.1mm height, the C2M0045170D is compact yet powerful, making it suitable for space-sensitive applications requiring high current capability.

The device is optimized for use in industrial, laboratory, renewable energy, and battery management settings, and especially valuable in systems requiring avalanche ruggedness, fast switching, and easy parallelization.

Industry-leading silicon carbide MOSFET technology. Supports demanding power conversion and inverter applications. Wide operating temperature range ensures adaptability in industrial environments. Low RDS(on) and fast switching for improved efficiency.

Compatible with modern high-frequency power electronics designs. Easy to parallel and simple to drive. Excellent intrinsic diode behavior with low reverse recovery charge. Robust TO-247 package for reliable mounting.

For engineers and designers seeking high-efficiency, high-voltage MOSFET performance, Wolfspeed C2M0045170D represents a premier choice in advanced power electronics components. Explore additional Wolfspeed semiconductor solutions for more possibilities in your applications.

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Frequently Asked Questions

The maximum continuous drain current of the C2M0045170D is 72A, making it suitable for demanding applications.

This MOSFET has a maximum drain-source voltage of 1700V, ensuring compatibility with high-voltage systems.

It is designed for through-hole mounting, which facilitates easy assembly into high-power modules and boards.

The C2M0045170D operates reliably within a temperature range of -40°C to 150°C.

The package type for this model is TO-247, which is a robust design for reliable mounting.

The maximum gate-source voltage for the C2M0045170D is 25V.

The typical gate charge at Vgs is 188nC, which aids in efficient switching performance.

The maximum power dissipation for the C2M0045170D is 520W, allowing it to handle substantial power levels.

The maximum drain-source resistance (Rds) is 45mΩ, which contributes to improved efficiency and reduced losses.

The dimensions of this MOSFET are 16.13mm in length, 5.21mm in width, and 21.1mm in height.

This model is an N-Channel MOSFET, which is suitable for various power electronics applications.

It is optimized for applications in industrial, laboratory, renewable energy, and battery management settings, particularly where fast switching and avalanche ruggedness are required.