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onsemi N-Channel Power MOSFET , 117A, 150V, TO-220, 3-Pin Package FDP083N15A
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 8.78mm |
| Length | 10.36mm |
| Model | FDP083N15A |
| Width | 4.67mm |
| Mount Type | Through Hole |
| Series | FDP083N15A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 117A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 8.3mΩ |
| Maximum Power Dissipation Pd | 294W |
| Typical Gate Charge Qg @ Vgs | 64.5nC |
| Maximum Gate Source Voltage Vgs | 30V dc |
| Forward Voltage Vf | 1.25V |
| Transistor Configuration | Single |
Key Features
- Advanced N-Channel Power MOSFET with high performance trench technology.
- Maximum continuous drain current of 117A for demanding loads.
- Rated for a maximum drain-source voltage of 150V.
- Low RDS(on) of 8.3mΩ ensures reduced power losses and efficient operation.
- TO-220 package with 3 pins allows convenient through-hole mounting.
- Typical gate charge of 64.5nC minimizes switching losses.
- Fast switching speed for applications in power supplies and motor drives.
- Wide operating temperature range from -55°C to 150°C.
Product Description
The onsemi FDP083N15A-F102 is an advanced N-channel power MOSFET designed to deliver high current handling and efficient switching performance for demanding industrial, commercial, and laboratory applications. Featuring a maximum drain current of 117A and a drain-source voltage rating of 150V, this device employs PowerTrench technology to minimize on-state resistance and optimize energy efficiency.
The TO-220 package with three pins allows straightforward integration into PCB designs with through-hole mounting, making it suitable for robust installations and commercial electronics.
This MOSFET is characterized by rapid switching speeds combined with low gate charge requirements (64.5nC typical), making it ideal for synchronous rectification, battery protection circuits, and motor drives. Its wide temperature range from -55°C to 150°C ensures resilience in harsh operating environments and supports extended product lifespans.
Applications include AC-DC power supplies for servers, workstations, desktop PCs, telecom equipment, battery management, micro solar inverters, and various other high-performance power conversion systems. The single-element chip design supports precise control and stable operation, while RoHS compliance ensures alignment with international regulatory standards.
Explore more power components with onsemi's MOSFET range in the Electronics & Electricals - Semiconductor category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 117A, making it suitable for demanding loads.
This model has a maximum drain-source voltage rating of 150V.
It uses a TO-220 package type, which allows for convenient through-hole mounting.
The typical gate charge is 64.5nC, which helps minimize switching losses.
The RDS(on) value is 8.3mΩ, ensuring reduced power losses and efficient operation.
This MOSFET operates within a temperature range of -55°C to 150°C.
The TO-220 package has 3 pins.
The maximum power dissipation is rated at 294W.
Yes, this model is RoHS compliant, aligning with international regulatory standards.
It features an N-channel configuration, which is common for power applications.
This model is suitable for applications such as AC-DC power supplies, battery management, and motor drives.
The forward voltage rating is 1.25V.
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