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Vishay TrenchFET P-Channel MOSFET 3.8A 200V PowerPAK 1212-8 SI7119DN-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.07mm |
| Model | SI7119DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8 |
| Minimum Operating Temperature | 50°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 8 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.8A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 1.1Ω |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 10.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- P-channel MOSFET suitable for advanced power control applications.
- Maximum continuous drain current of 3.8A for robust circuit designs.
- PowerPAK 1212-8 package ensures efficient thermal dissipation.
- Operates reliably over a wide temperature range from -50°C to 150°C.
- Optimized for low switching and conduction losses.
- Drain-source resistance of 1.1Ω enables improved efficiency.
- Maximum power dissipation up to 52W supports high-demand operation.
- Surface mount device with 8-pin configuration.
Product Description
Vishay SI7119DN-T1-GE3 is an advanced TrenchFET P-channel MOSFET designed for demanding electronic applications requiring efficient power management and reliable switching performance. It features a maximum continuous drain current of 3.8A, a drain-source voltage capability of 200V, and operates in a compact PowerPAK 1212-8 surface mount package.
This MOSFET is part of Vishay's TrenchFET series, known for superior efficiency and reduced losses during operation. The optimized package provides excellent thermal dissipation, with a height of just 1.07mm and width of 3.3mm, making it ideal for space-constrained designs.
Engineered with low drain-source resistance of 1.1Ω and a maximum power dissipation of 52W, the device handles high-switching loads while maintaining operational stability across a wide temperature range from -50°C to 150°C. The high gate-source voltage rating of 20V and typical gate charge of 10.6nC enable fast, responsive operation in active clamp applications or intermediate DC/DC power supplies.
The 8-pin surface mount configuration facilitates easy integration into PCBs and compact electronic assemblies, while IEC 61249-2-21 standards compliance underscores its suitability for industrial, laboratory, and commercial circuit designs. This MOSFET is halogen-free and Rg/UISTested for enhanced reliability.
Use cases include DC/DC converters, industrial switching automation, power amplifier modules, high-efficiency load control, and electronic systems requiring compact robust switching devices.
P-channel architecture supports negative voltage switching. Compatible with high-efficiency power supply designs. Low thermal resistance ensures prolonged device lifespan. Wide thermal and electrical ratings for industrial and laboratory deployments.
Browse more MOSFETs and Vishay TrenchFET series solutions in the EnvMart semiconductors catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.8A.
It has a maximum drain-source voltage capability of 200V.
This MOSFET comes in a PowerPAK 1212-8 package type.
The height is 1.07mm and the width is 3.3mm.
The maximum power dissipation is up to 52W.
The drain-source resistance is 1.1Ω.
It operates reliably over a temperature range from -50°C to 150°C.
The typical gate charge is 10.6nC at Vgs.
The maximum gate-source voltage rating is 20V.
It complies with IEC 61249-2-21 standards.
This model is a P-channel MOSFET.
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