$5.98
$5.80
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Toshiba N-Channel Enhancement MOSFET, 9 A, 900 V, 250W TO-3PN 3-Pin TK9J90E
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 20mm |
| Length | 15.5mm |
| Model | TK9J90E |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PN |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 9 amperes.
- Maximum drain-source voltage rating of 900 volts.
- Power dissipation capability up to 250 watts.
- Three-pin, through hole mount TO-3PN package.
- Low on-resistance of 1.3 ohms for efficient power use.
- Enhancement mode channel type for switching applications.
- Typical gate charge of 46 nanocoulombs at specified gate voltage.
- Operating temperature up to 150 degrees Celsius.
Product Description
Toshiba TK9J90E is a high-performance N-Channel enhancement-type MOSFET, optimized for industrial and electronic power control applications requiring up to 9 amperes continuous drain current and 900 volts maximum drain-source voltage.
This MOSFET utilizes a robust TO-3PN three-pin package designed for through-hole mount, ensuring thermal stability and durability in demanding electrical environments.
With a maximum power dissipation rating of 250 watts and a low typical drain-source on-resistance of 1.3 ohms, it offers efficient switching and power handling suitable for power supply circuits, motor control, and other industrial equipment.
The device's enhancement mode operation and typical gate charge of 46 nC at specified gate-source voltage allow for precise electronic switching performance. Its gate-source voltage rating ranges from -30 volts to +30 volts to accommodate varied control voltages safely.
The MOSFET can reliably operate at temperatures up to 150°C, supporting applications in industrial, manufacturing, power management, and HVAC control systems. Maximum continuous drain current of 9 A supports medium power loads.
High voltage rating of 900 V suitable for voltage-intensive circuits. Through-hole mount TO-3PN package enables easy PCB integration. Compact size dimensions support dense circuit layouts. Enhancement mode channel provides stable switching characteristics.
Low forward voltage drop enhances efficiency and thermal management. Wide gate-source voltage range supports flexible signal control. Designed for industrial, power electronics, and manufacturing use cases.
This Toshiba MOSFET TK9J90E is manufactured in China and meets standard electronic component criteria for reliability and performance. It is ideal for engineers and technicians designing power semiconductor solutions.
Explore the Electronics & Electricals category on EnvMart for more advanced semiconductors and MOSFETs from leading manufacturers such as Toshiba.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 9 amperes.
It has a maximum drain-source voltage rating of 900 volts.
The power dissipation capability of the TK9J90E is up to 250 watts.
The typical gate charge at the specified gate-source voltage is 46 nanocoulombs.
The dimensions of the TO-3PN package are 20 mm in height, 15.5 mm in length, and 4.5 mm in width.
The maximum operating temperature for the TK9J90E is 150 degrees Celsius.
This MOSFET uses a through-hole mount type.
It features an N-channel enhancement mode.
The maximum gate-source voltage rating is -30 volts to +30 volts.
The typical drain-source on-resistance for this model is 1.3 ohms.
This MOSFET is suitable for power supply circuits, motor control, and other industrial equipment applications.
The TK9J90E is manufactured in China.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$2.77
$2.69
-3%
New
$0.22
$0.21
-3%
New
Recently Viewed Products
$5.98
$5.80
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent