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DiodesZetex N-Channel MOSFET 300 mA 50 V Enhancement Mode, 3-Pin SOT-23 DMN53D0U-7

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DiodesZetex N-Channel MOSFET 300 mA 50 V Enhancement Mode, 3-Pin SOT-23 DMN53D0U-7

Name: DiodesZetex N-Channel MOSFET 300 mA 50 V Enhancement Mode, 3-Pin SOT-23 DMN53D0U-7
Brand: DiodesZetex
SKU: 412672
Price: 0.1 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1mm
Length	3mm
Model	DMN53D0U-7
Width	1.4mm
Mount Type	Surface
Series	DMN53D0U
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	520mW
Typical Gate Charge Qg @ Vgs	0.6nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	1.4V

Key Features

Features a low maximum drain-source resistance of 3 ohms for efficient switching.
Supports continuous drain current of up to 300 mA suitable for low current applications.
Compact SOT-23 surface mount package for space-saving PCB design.
Maximum power dissipation rating of 520 mW ensuring reliable performance.
Wide operating temperature range from -55°C to 150°C for demanding environments.
Typical gate charge of 0.6 nC allows fast switching capabilities.
Maximum gate-source voltage range of -12 to +12 V for robust gate drive flexibility.
Complies with automotive standard AEC-Q101 assuring high reliability.

Product Description

DiodesZetex DMN53D0U-7 is an N-Channel MOSFET transistor designed for efficient switching in electronic circuits. It delivers a maximum continuous drain current of 300 mA and withstands a drain-source voltage up to 50 V.

This transistor utilizes an enhancement mode channel operated in a compact 3-Pin SOT-23 surface mount package. Its low maximum drain-source resistance of 3 ohms and typical gate charge of 0.6 nC support high efficiency and fast switching in low power electronic applications.

Operating temperature ranges from -55°C to 150°C enable this MOSFET to perform reliably in industrial, automotive, and commercial environments. The device complies with the stringent automotive standard AEC-Q101, highlighting its suitability for automotive electronic control units and related systems.

The maximum power dissipation rating of 520 mW and robust gate-source voltage range (−12 V to +12 V) offer design flexibility while maintaining component safety and longevity.

This MOSFET is ideal for use in switching regulators, signal processing, amplification, and power management circuits requiring compact size and dependable operation in discrete semiconductor applications.

Low Rds(on) of 3Ω for minimal conduction losses. 300 mA continuous current capability. Compact surface mount SOT-23 package. Wide operating temperature −55°C to 150°C. AEC-Q101 automotive qualification for reliability. Maximum gate-source voltage ±12 V.

Typical gate charge 0.6 nC for fast switching. 520 mW power dissipation maximum.

Explore the broad range of DiodesZetex MOSFETs and other electronic components available at EnvMart for efficient power and signal management across industrial, automotive, and consumer electronics markets.