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DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET 10.5A 30V Enhancement 8-Pin SOIC DMC3016LSD-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.5mm
Length 4.95mm
Model DMC3016LSD-13
Width 3.95mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020
Pin Count 8
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 10.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 20mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 11.3nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.7V
Transistor Configuration Isolated

Key Features

  • Features dual N-channel and P-channel MOSFET configuration for versatile circuit design.
  • Provides maximum continuous drain current of 10.5 amperes for efficient power handling.
  • Rated for a maximum drain-source voltage of 30 volts ensuring robust operation.
  • Compact 8-pin SOIC surface-mount package suitable for modern PCB layouts.
  • Enhancement mode device with a low maximum drain-source resistance of 20 milliohms.
  • Maximum power dissipation of 1.6 watts allowing reliable thermal performance.
  • Wide operating temperature range from -55°C to +150°C for demanding industrial applications.
  • Complies with RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, and J-STD-020 standards for quality and reliability.

Product Description

DiodesZetex DMC3016LSD-13 is a high-performance isolated MOSFET device comprising dual Type N and Type P-channel transistors housed in a compact 8-pin Small Outline IC (SOIC) package. Designed to deliver a maximum continuous drain current of 10.5 amperes and a drain-source voltage of 30 volts, this enhancement mode MOSFET is ideal for efficient power switching applications in industrial, automotive, and electronic circuits.

This MOSFET features a low maximum drain-source resistance of 20 milliohms, improving conduction efficiency and reducing heat generation. The device supports a maximum power dissipation of 1.6 watts, ensuring reliable operation under significant load currents. Its gate charge is optimized at 11.3 nC at Vgs, contributing to faster switching capabilities.

The product is built to meet stringent quality and environmental standards, including RoHS compliance, UL 94V-0 flammability rating, automotive grade AEC-Q101 certification, MIL-STD-202 for environmental testing, and J-STD-020 standards for moisture sensitivity. It operates reliably in extreme temperatures ranging from -55°C to +150°C, suitable for harsh industrial and automotive environments.

With precise dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height, the SOIC package is surface mount compatible for automated assembly lines and compact circuit designs. The device’s isolated transistor configuration ensures minimal cross-interference and efficient power management.

This MOSFET is suitable for use in power management, switching regulators, motor drivers, power supplies, and other electronic control circuits requiring high current switching capabilities with dual polarity channels.

Features dual N-channel and P-channel MOSFET configuration for versatile circuit design. Provides maximum continuous drain current of 10.5 amperes for efficient power handling. Rated for a maximum drain-source voltage of 30 volts ensuring robust operation.

Compact 8-pin SOIC surface-mount package suitable for modern PCB layouts. Enhancement mode device with a low maximum drain-source resistance of 20 milliohms. Maximum power dissipation of 1.6 watts allowing reliable thermal performance.

Wide operating temperature range from -55°C to +150°C for demanding industrial applications. Complies with RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, and J-STD-020 standards for quality and reliability. Explore more DiodesZetex semiconductors and MOSFET components at EnvMart to meet your electronic circuit design and industrial manufacturing needs.

DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET 10.5A 30V Enhancement 8-Pin SOIC DMC3016LSD-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 10.5 amperes, allowing efficient power handling in various applications.

This MOSFET is rated for a maximum drain-source voltage of 30 volts, ensuring robust operation in circuit designs.

It comes in a compact 8-pin SOIC surface-mount package, suitable for modern PCB layouts and automated assembly.

The maximum power dissipation for this MOSFET is 1.6 watts, enabling reliable thermal performance under load.

It operates reliably over a wide temperature range from -55°C to +150°C, making it suitable for demanding industrial applications.

The maximum gate-source voltage for this device is -20V to +20V, which is critical for ensuring proper operation in circuits.

The typical gate charge at Vgs for this MOSFET is 11.3 nC, contributing to its faster switching capabilities.

It complies with several standards including RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, and J-STD-020, ensuring quality and reliability.

The maximum drain-source resistance for this model is 20 milliohms, which helps improve conduction efficiency.

This MOSFET contains two elements per chip, featuring both N-channel and P-channel transistors.

The height of the package is 1.5 mm, making it suitable for compact circuit designs.

It features an isolated transistor configuration, which minimizes cross-interference and enhances power management.

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