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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMC3016LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 10.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 11.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
DiodesZetex DMC3016LSD-13 is a high-performance isolated MOSFET device comprising dual Type N and Type P-channel transistors housed in a compact 8-pin Small Outline IC (SOIC) package. Designed to deliver a maximum continuous drain current of 10.5 amperes and a drain-source voltage of 30 volts, this enhancement mode MOSFET is ideal for efficient power switching applications in industrial, automotive, and electronic circuits.
This MOSFET features a low maximum drain-source resistance of 20 milliohms, improving conduction efficiency and reducing heat generation. The device supports a maximum power dissipation of 1.6 watts, ensuring reliable operation under significant load currents. Its gate charge is optimized at 11.3 nC at Vgs, contributing to faster switching capabilities.
The product is built to meet stringent quality and environmental standards, including RoHS compliance, UL 94V-0 flammability rating, automotive grade AEC-Q101 certification, MIL-STD-202 for environmental testing, and J-STD-020 standards for moisture sensitivity. It operates reliably in extreme temperatures ranging from -55°C to +150°C, suitable for harsh industrial and automotive environments.
With precise dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height, the SOIC package is surface mount compatible for automated assembly lines and compact circuit designs. The device’s isolated transistor configuration ensures minimal cross-interference and efficient power management.
This MOSFET is suitable for use in power management, switching regulators, motor drivers, power supplies, and other electronic control circuits requiring high current switching capabilities with dual polarity channels.
Features dual N-channel and P-channel MOSFET configuration for versatile circuit design. Provides maximum continuous drain current of 10.5 amperes for efficient power handling. Rated for a maximum drain-source voltage of 30 volts ensuring robust operation.
Compact 8-pin SOIC surface-mount package suitable for modern PCB layouts. Enhancement mode device with a low maximum drain-source resistance of 20 milliohms. Maximum power dissipation of 1.6 watts allowing reliable thermal performance.
Wide operating temperature range from -55°C to +150°C for demanding industrial applications. Complies with RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, and J-STD-020 standards for quality and reliability. Explore more DiodesZetex semiconductors and MOSFET components at EnvMart to meet your electronic circuit design and industrial manufacturing needs.
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