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DiodesZetex N-Channel Enhancement Mode MOSFET 900 mA 20 V 3-Pin SOT-323 DMN2710UWQ-7

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DiodesZetex N-Channel Enhancement Mode MOSFET 900 mA 20 V 3-Pin SOT-323 DMN2710UWQ-7

Name: DiodesZetex N-Channel Enhancement Mode MOSFET 900 mA 20 V 3-Pin SOT-323 DMN2710UWQ-7
Brand: DiodesZetex
SKU: 412487
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	2.2mm
Model	DMN2710UWQ-7
Width	1.35mm
Mount Type	Surface
Series	DMN
Maximum Operating Temperature	150°C
Package Type	SOT-323
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	900mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	450mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	0.6W
Typical Gate Charge Qg @ Vgs	0.6nC
Maximum Gate Source Voltage Vgs	6V
Forward Voltage Vf	1.2V

Key Features

Maximum continuous drain current of 900 mA ensuring reliable operation.
Drain-source voltage rating of 20 V suitable for low voltage power applications.
Low Rds(on) resistance of 450 mΩ for efficient conduction.
Compact 3-pin SOT-323 surface-mount package format.
Maximum power dissipation of 0.6 W supporting moderate power loads.
Wide operating temperature range from -55°C to 150°C for varied environments.
Typical gate charge of 0.6 nC enabling fast switching speed.
Compliance with AEC-Q101 automotive standard for quality assurance.

Product Description

DiodesZetex DMN2710UWQ-7 is an N-channel enhancement mode MOSFET designed for power management and switching applications in electronics and electrical engineering. This MOSFET offers a maximum continuous drain current of 900 mA and a maximum drain-source voltage of 20 V, allowing for reliable low-voltage operation.

The device comes in a 3-pin SOT-323 surface-mount package, making it suitable for compact PCB designs. Its low on-resistance (Rds(on)) of 450 milliohms ensures high efficiency by minimizing conduction losses. With a maximum power dissipation of 0.6 Watts, the MOSFET is capable of handling moderate power loads.

The DMN2710UWQ-7 operates effectively across a wide temperature range from -55°C to 150°C, accommodating various industrial and automotive environments. It exhibits a typical gate charge of 0.6 nanocoulombs, facilitating fast switching speeds critical for power applications. The device features a forward voltage of 1.2 V, contributing to efficient current conduction.

This MOSFET is fully compliant with the AEC-Q101 automotive standards, ensuring stringent quality and reliability for automotive system integration. Its enhancement mode channel type allows for precise gate control.

Maximum continuous drain current of 900 mA ensuring reliable operation. Drain-source voltage rating of 20 V suitable for low voltage power applications. Low Rds(on) resistance of 450 mΩ for efficient conduction. Compact 3-pin SOT-323 surface-mount package format.

Maximum power dissipation of 0.6 W supporting moderate power loads. Wide operating temperature range from -55°C to 150°C for varied environments. Typical gate charge of 0.6 nC enabling fast switching speed. Compliance with AEC-Q101 automotive standard for quality assurance.

Enhancement mode channel for controlled switching performance. Forward voltage of 1.2 V supporting efficient current flow.

This MOSFET is ideal for applications in electronic circuits including power switching, amplification, and automotive systems, offering high quality, efficiency, and compact form factor. Consider browsing related semiconductor and discrete component products on EnvMart for comprehensive solutions.

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Frequently Asked Questions

The maximum continuous drain current of the DMN2710UWQ-7 is 900 mA, ensuring reliable operation in power management applications.

This MOSFET has a drain-source voltage rating of 20 V, making it suitable for low voltage power applications.

The on-resistance (Rds(on)) of this model is 450 mΩ, which contributes to efficient conduction and minimizes conduction losses.

The DMN2710UWQ-7 comes in a compact 3-pin SOT-323 surface-mount package with dimensions of 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

The maximum power dissipation for this model is 0.6 W, which supports moderate power loads in various applications.

This MOSFET operates effectively across a wide temperature range from -55°C to 150°C, accommodating various industrial and automotive environments.

The typical gate charge (Qg) for the DMN2710UWQ-7 is 0.6 nC, enabling fast switching speeds critical for power applications.

Yes, the DMN2710UWQ-7 is compliant with the AEC-Q101 automotive standard, ensuring quality assurance for automotive system integration.

The forward voltage (Vf) for this model is 1.2 V, which supports efficient current conduction.

The DMN2710UWQ-7 features an N-channel enhancement mode, allowing for controlled switching performance in electronic circuits.

The maximum gate-source voltage (Vgs) for this MOSFET is 6 V, which is important for ensuring proper operation in circuits.

This MOSFET is suitable for applications in power switching, amplification, and automotive systems, providing high efficiency in a compact form factor.