Infineon 700V CoolMOS P7 N-Channel MOSFET, 8.5A Continuous Drain Current, 700V Drain Source Voltage IPA70R600P7SXKSA1

Infineon IPA70R600P7SXKSA1 is a 700V CoolMOS P7 Series N-Channel MOSFET designed for power switching in demanding industrial and commercial applications. This MOSFET supports a maximum continuous drain current of 8.5 amperes and can handle up to 700 volts drain-source voltage, making it suited for use in high-voltage power supplies, industrial converters, and inverters.

The device is packaged in a 3-pin TO-220 through-hole format, which enables easy mounting with bolt-down heat sinks, allowing efficient thermal dissipation to maintain device reliability. With a low drain-source resistance of 600 milliohms, conduction losses during switching are significantly reduced, resulting in improved system efficiency.

The MOSFET operates reliably over a wide temperature range from -40°C to +150°C, ensuring performance in harsh industrial and laboratory environments. It features a maximum gate-source voltage of 30 volts and a forward diode voltage of 0.9 volts, controlling switching behavior and gate drive requirements.

Typical application areas include high-voltage power supply switching, industrial motor drives, telecom power stages, and prototyping setups requiring robust and thermally efficient components. The device is not rated for automotive standard applications and should be used accordingly.

High-voltage switching MOSFET suitable for industrial and commercial use. Efficient power dissipation with low Rds(on) and forward voltage drop. Wide thermal operating range broadens application possibilities. Robust TO-220 package supports through-hole mounting and heat sinking.

Compatible with discrete gate drive circuits in lab and test setups. Explore the Electronics & Electricals category for a wide selection of semiconductor components and MOSFET devices that meet various industrial and laboratory requirements.