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onsemi Small Signal NPN Transistor 100 mA, 65 V, 3-Pin SOT-323 Package BC846BWT1G

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onsemi Small Signal NPN Transistor 100 mA, 65 V, 3-Pin SOT-323 Package BC846BWT1G

Name: onsemi Small Signal NPN Transistor 100 mA, 65 V, 3-Pin SOT-323 Package BC846BWT1G
Brand: onsemi
SKU: 236840
Price: 0.02 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	0.9mm
Length	2.2mm
Model	BC846BWT1G
Width	1.35mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-323
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	65V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	150mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Maximum DC collector current of 100 mA ensures effective switching performance.
Collector-emitter voltage rating of 65 V supports moderate voltage applications.
Transistor configured as a single, NPN polarity device suitable for general amplification.
High current gain minimum hFE of 100 enables efficient amplification.
Maximum power dissipation of 150 mW suitable for low power circuits.
Operating temperature range from -55°C to 150°C provides stability under varying conditions.
Maximum transition frequency of 100 MHz allows high frequency switching.
Compliant with automotive standard AEC-Q101, suitable for automotive and industrial use.

Product Description

onsemi BC846BWT1G is a small signal NPN bipolar transistor designed for low power switching and amplification tasks. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 65 V, making it suitable for a variety of general purpose electronic applications.

Encapsulated in a compact 3-Pin SOT-323 surface mount package, this transistor has precise dimensions with a length of 2.2 mm, width of 1.35 mm, and height of 0.9 mm, allowing for space-efficient PCB layouts in modern electronics.

The device is configured as a single NPN transistor with a minimum DC current gain (hFE) of 100 and maximum power dissipation of 150 mW, supporting efficient operation within low power circuits. It operates reliably across a wide temperature range from -55 degrees Celsius up to 150 degrees Celsius, suitable for industrial and automotive environments.

With a transition frequency of 100 MHz, the BC846BWT1G can be utilized in switching and amplification circuits requiring moderate to high frequency performance. It holds automotive qualification under the AEC-Q101 standard, making it ideal for automotive electronics and other demanding electronic systems.

Maximum DC collector current: 100 mA. Collector-emitter voltage: 65 V. Surface mount 3-pin SOT-323 package for compact PCB mounting. Minimum DC current gain of 100. Maximum power dissipation of 150 mW. Operating temperature range from -55°C to 150°C.

Maximum transition frequency of 100 MHz for high frequency usage. AEC-Q101 automotive standard qualified.

This transistor is suitable for electronic applications including industrial controls, automotive systems, communication devices, and general purpose amplification and switching circuits. Its compact form factor and performance make it an essential component for modern electronics design.

Explore further Bipolar Transistors and onsemi semiconductor components at EnvMart for diverse industrial and laboratory electronics requirements.