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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 2.2mm |
| Model | BCM847BS,115 |
| Width | 2.2mm |
| Mount Type | Surface |
| Series | BCM847 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Current Mirror |
| Maximum Transition Frequency ft | 250MHz |
| onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363Brand | onsemi |
The Nexperia BCM847BS,115 is a precision NPN bipolar transistor designed for a variety of high-reliability electronic applications. Featuring a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V, this transistor supports moderate power switching and amplification tasks.
Housed in a space-efficient 6-pin SOT-363 surface mount package, the device has a compact footprint with length and width both at 2.2 mm and a height of 1.1 mm. It utilizes a current mirror transistor configuration ideal for integrated analog circuits and signal processing.
Operating temperature ranges from -65°C to 150°C allow usage in demanding environments including automotive and industrial sectors. The minimum DC current gain of 200 and transition frequency of 250 MHz ensure responsive and efficient performance in fast switching and amplification.
With a maximum power dissipation of 300 mW and adherence to RoHS and AEC-Q101 automotive standards, this Nexperia transistor offers both performance and compliance for high-quality semiconductor requirements.
The transistor supports a maximum power dissipation of 300 mW for efficient operation. It operates within a temperature range of -65°C to 150°C for robust environmental tolerance. The device features a minimum DC current gain (hFE) of 200 ensuring effective amplification.
The maximum transition frequency (ft) is rated at 250 MHz for high-speed switching applications. Its compact dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height enable space-saving circuit designs. The product conforms to RoHS directive and automotive standard AEC-Q101 for reliability.
Suitable for general-purpose applications in electronic, automotive, and power management circuits.
This transistor is ideal for use in industrial electronics, automotive electronic systems, power management modules, and integrated circuit designs. Its surface mount package supports automated placement in high-volume manufacturing processes.
Explore more advanced semiconductor and bipolar transistor products in the Electronics & Electricals category at EnvMart for comprehensive electronic component solutions.
Explore more products in our Bipolar Transistors category.
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