onsemi Small Signal PNP Transistor Maximum DC Collector Current -100 mA Maximum Collector Emitter Voltage -45 V BC857ALT1G

onsemi BC857ALT1G is a Small Signal PNP Transistor designed for various electronic applications requiring moderate current and voltage handling capabilities. The device features a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -45 V, delivering reliable performance for switching and amplification circuits.

Packaged in a compact 3-Pin SOT-23 surface mount type, this transistor facilitates efficient PCB space utilization while providing excellent electrical characteristics. With a maximum power dissipation rating of 225 mW and a minimum DC current gain (hFE) of 125, it ensures stable operation in low power signal processing environments.

The transistor supports a wide operating temperature range from -65°C to 150°C, making it suitable for industrial, automotive, and general purpose electronics. Additionally, it features a maximum transition frequency of 100 MHz, enabling usage in moderate frequency applications such as audio amplification and signal switching.

Qualified to AEC-Q101 automotive standards, the BC857ALT1G ensures exceptional reliability under harsh automotive environmental conditions, suitable for automotive electronics and embedded systems.

The physical dimensions of the transistor are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height, allowing compact assembly in modern electronic devices. It has 3 pins configured in a single transistor layout, optimized for surface mounting on printed circuit boards.

This transistor supports a maximum power dissipation of 225 mW. It features a minimum DC current gain (hFE) of 125 ensuring reliable switching performance. Designed for surface mounting with a compact SOT-23 package type.

The transistor operates safely between -65°C minimum and 150°C maximum temperatures. Its maximum transition frequency (ft) is 100 MHz, suitable for high frequency applications. It is AEC-Q101 automotive standard qualified for durability and reliability in automotive environments.

The narrow transistor dimensions are 3.04 mm length, 1.4 mm width, and 1.11 mm height.

This transistor is widely applicable in industrial electronics, automotive circuits, telecommunications, and consumer electronics. It is an essential component for amplification, switching, and signal modulation tasks where low power PNP transistors are required.

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