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DiodesZetex N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin SOT-23 DMN61D9UT-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMN61D9UT-7
Width 1.4mm
Mount Type Surface
Series DMN61D9U
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 380mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 20mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 540mW
Typical Gate Charge Qg @ Vgs 0.4nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.4V

Key Features

  • Designed for high efficiency power management applications.
  • Low on-state resistance ensures minimal power loss.
  • Fast switching speed with low input capacitance.
  • Supports maximum power dissipation of 540 mW.
  • Enhanced channel mode for improved performance.
  • Wide operating temperature range from -55°C to 150°C.
  • Automotive qualified with AEC-Q101 standard.

Product Description

DiodesZetex DMN61D9UT-7 is a N-Channel Enhancement Mode MOSFET designed for power management in electronic circuits. It features a maximum continuous drain current of 380 mA and a maximum drain-source voltage of 60 V, making it suitable for efficient switching and amplification.

Housed in a compact 3-pin SOT-23 surface-mount package, it offers low on-state resistance (20 mΩ), which reduces conduction losses. The device also supports a maximum power dissipation of 540 mW and fast switching speeds due to a typical gate charge of 0.4 nC at Vgs.

Operating reliably between -55°C and 150°C, it is automotive qualified with the AEC-Q101 standard, ensuring suitability for automotive electronics applications. The DMN61D9UT-7’s small physical dimensions allow for high-density PCB layouts.

Key features include enhanced channel mode for improved efficiency, a maximum gate-source voltage of 20 V, a forward voltage of 1.4 V, and a minimal pin count of 3 for simplified integration.

High efficiency power management MOSFET. Low on-state resistance for minimal power loss. Fast switching with low gate charge. Automotive standard AEC-Q101 qualified device. Compact SOT-23 surface-mount package. Wide operating temperature range suitable for harsh conditions.

Robust maximum power dissipation of 540 mW. Minimal size: 3mm length, 1.4mm width, 1.1mm height.

This MOSFET is ideal for applications in consumer electronics, automotive systems, power management circuits, and other industrial electronics requiring efficient low-current switching components. EnvMart offers this device with guaranteed new condition and authentic manufacturing standards.

Explore more DiodesZetex semiconductor components and power management devices in the EnvMart catalog for your electronic design needs and applications.

DiodesZetex N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin SOT-23 DMN61D9UT-7
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Frequently Asked Questions

The maximum continuous drain current for the DMN61D9UT-7 is 380 mA.

It can handle a maximum drain-source voltage of 60 V.

The on-state resistance is 20 mΩ, which helps reduce conduction losses.

The maximum power dissipation rating is 540 mW.

The typical gate charge at Vgs is 0.4 nC.

It operates reliably between -55°C and 150°C.

This MOSFET is housed in a SOT-23 package and has a pin count of 3.

Yes, it is automotive qualified with the AEC-Q101 standard.

It is suitable for applications in consumer electronics, automotive systems, and power management circuits.

The forward voltage is 1.4 V.

It uses an N-channel enhancement mode.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

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