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Toshiba N-Channel MOSFET, 20 A, 600 V Enhancement Type, 3-Pin TO-3P TK20J60W,S1VQ(O
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 20mm |
| Length | 15.5mm |
| Model | TK20J60W,S1VQ(O |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 155mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 165W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 20 amperes supports high load applications.
- Maximum drain-source voltage of 600 volts ensures high voltage tolerance.
- Low forward voltage of -1.7 volts for efficient conduction.
- Package type TO-3P with 3 pins enables through-hole mounting.
- Maximum power dissipation of 165 watts allows robust thermal management.
- Operating temperature ranges from -55°C to 150°C for wide environmental usage.
- Enhancement mode channel type provides normally-off operation.
- Typical gate charge of 48 nanocoulombs facilitates fast switching.
Product Description
Toshiba TK20J60W,S1VQ(O is a high-performance N-Channel MOSFET transistor designed for power electronics applications requiring efficient switching at high current and voltage ratings. This enhancement mode device supports a maximum continuous drain current of 20 amperes and a maximum drain-source voltage of 600 volts, making it suitable for industrial, automotive, and consumer electronics.
The MOSFET is packaged in a TO-3P through-hole package with 3 pins, providing excellent thermal and mechanical stability for applications involving high power dissipation up to 165 watts. It features a low forward voltage of -1.7 volts and a typical gate charge of 48 nanocoulombs, enabling fast switching speeds and efficient operation in power circuits.
Designed to operate reliably within temperatures ranging from -55°C to 150°C, the device is robust for use in harsh environments. The maximum gate-source voltage range of -30 to +30 volts offers protection against voltage spikes, enhancing device longevity. Its compact size with dimensions of 20 mm height, 15.5 mm length, and 4.5 mm width facilitates integration into varied PCB layouts.
This Toshiba TK series MOSFET is sourced from Japan, ensuring high manufacturing standards and quality. It is an ideal component for power management in industrial automation, motor drives, power supplies, and other electronic designs requiring reliable high-current MOSFET transistors.
Maximum continuous drain current of 20 A. Maximum drain-source voltage of 600 V. Enhancement channel mode for efficient switching. TO-3P package with 3 pins for through-hole mount. High power dissipation capability of 165 W.
Wide operating temperature range from -55°C to 150°C. Typical gate charge of 48 nC for fast operation. Compact industrial design dimensions.
Available for integration in semiconductor, power electronics, and discrete component catalogs. Explore more Toshiba MOSFETs and discrete semiconductors at EnvMart for enhanced electronic system design.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes, making it suitable for high load applications.
It supports a maximum drain-source voltage of 600 volts, ensuring high voltage tolerance for various applications.
This MOSFET is packaged in a TO-3P type, which allows for through-hole mounting with 3 pins.
The maximum power dissipation for this device is 165 watts, allowing for robust thermal management in high power applications.
It operates reliably within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The typical gate charge for the Toshiba TK20J60W,S1VQ(O is 48 nanocoulombs, which facilitates fast switching speeds.
The dimensions of this model are 20 mm in height, 15.5 mm in length, and 4.5 mm in width.
This model features an N-channel type, which is designed for enhancement mode operation, providing normally-off functionality.
The maximum gate-source voltage range is -30 to +30 volts, which helps protect against voltage spikes.
It is suitable for power management in industrial automation, motor drives, and power supplies, among other electronic designs.
The forward voltage for this device is -1.7 volts, contributing to its efficient conduction characteristics.
This model is sourced from Japan, ensuring adherence to high manufacturing standards and quality.
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