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DiodesZetex P-Channel MOSFET 3.3 A 20 V Enhancement 3-Pin SOT-23 DMG2305UX-13

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DiodesZetex P-Channel MOSFET 3.3 A 20 V Enhancement 3-Pin SOT-23 DMG2305UX-13

Name: DiodesZetex P-Channel MOSFET 3.3 A 20 V Enhancement 3-Pin SOT-23 DMG2305UX-13
Brand: DiodesZetex
SKU: 410777
Price: 0.09 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	DMG2305UX-13
Width	1.4mm
Mount Type	Surface
Series	DMG
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	3.3A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.4W
Typical Gate Charge Qg @ Vgs	10.2nC
Maximum Gate Source Voltage Vgs	-8, +8V

Key Features

This MOSFET uses an enhancement channel mode for reliable operation.
It is housed in a compact 3-pin SOT-23 package ideal for surface mounting.
The device has a low maximum drain-source resistance of 200 milliohms.
Operates over a wide temperature range from -55 to 150 °C for robust thermal performance.
Includes automotive standard AEC-Q101 compliance, suitable for demanding environments.
Features a typical gate charge of 10.2 nC at gate-source voltage, optimizing switching efficiency.
Designed with a maximum gate-source voltage tolerance of -8 V to +8 V.
Physical dimensions are 3 mm length, 1.4 mm width, and 1.1 mm height for compact PCB footprint.

Product Description

DiodesZetex DMG2305UX-13 P-Channel MOSFET is engineered as a high-quality semiconductor device designed for switching and amplification in electronic circuits. Featuring a maximum continuous drain current rating of 3.3 A and a maximum drain-source voltage of 20 V, it enables efficient power management in compact equipment.

The device is a surface-mount component with a 3-pin SOT-23 package, offering a small footprint and ease of assembly on PCBs. Its enhancement mode channel provides controlled switching characteristics suitable for various power control applications.

The DMG2305UX-13 model exhibits a low maximum drain-source resistance of 200 milliohms, minimizing conduction losses during operation. It supports a maximum power dissipation of 1.4 W and is rated for reliable operation in temperatures ranging from -55 °C to 150 °C, making it suitable for automotive and industrial environments.

This MOSFET complies with the automotive AEC-Q101 standard, ensuring it meets the rigorous quality and reliability requirements for automotive electronic systems.

Its typical gate charge of 10.2 nC at the specified gate-source voltage contributes to fast switching speeds and reduced energy loss. The device's maximum gate-source voltage tolerance of -8 V to +8 V further enhances its durability in circuit applications.

The package dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height facilitate its integration into densely populated circuit boards while maintaining thermal efficiency. Enhancement mode channel for precise switching.

Surface-mount 3-pin SOT-23 package design. Low drain-source resistance of 200 mΩ for energy efficiency. Wide operating temperature range: -55°C to 150°C. Automotive standard AEC-Q101 certified component. Optimized gate charge of 10.2 nC for improved switching.

Maximum gate-source voltage tolerance from -8 V to +8 V. Compact physical dimensions for space-saving PCB design.

This MOSFET is widely used in automotive, industrial, and electronic applications requiring efficient power switching and amplification. It is ideal for designers seeking high performance in a small package. Explore EnvMart categories for more semiconductor devices and DiodesZetex components to enhance your electronic design projects.