DiodesZetex P-Channel MOSFET 30 V, 480 mA, Enhancement Mode, 3-Pin SOT-23 Package DMP31D0U

DiodesZetex DMP31D0U is a high-performance P-Channel MOSFET designed for electronic circuit applications requiring low voltage and moderate current capabilities. It supports a maximum continuous drain current of 480 mA and a maximum drain source voltage of 30 V, operating in enhancement mode to provide efficient switching performance. Encapsulated in a compact SOT-23 surface mount package with 3 pins, it suits space-conscious PCB designs.

This device dissipates up to 710 mW of power safely and functions reliably within a wide temperature range of -55°C to 150°C, catering to industrial, automotive, and consumer electronics environments. The typical gate charge of 1.5 nC and maximum gate source voltage of ±8 V facilitate precise gate control for switching efficiency.

The MOSFET’s 2 Ω maximum drain source resistance ensures controlled on-state characteristics, important for power management and signal conditioning. Its small dimensions (3 mm length, 1.4 mm width, and 1.1 mm height) make it ideal for compact applications, including power regulation, amplification, and switching in electronic circuits.

This product finds broad use in industrial automation, embedded system design, and electronic manufacturing sectors, meeting the demands of surface mount technology for high-density PCB assembly. It supports the innovation needs of engineers designing efficient, reliable power control solutions.

This MOSFET operates in enhancement mode for efficient switching. It features a compact 3-pin SOT-23 surface mount package. Maximum power dissipation is rated at 710 mW, suitable for moderate power applications. Operating temperature range spans from -55°C to 150°C for robust performance.

The device has a typical gate charge of 1.5 nC at Vgs and maximum drain source resistance of 2 Ω. Maximum gate source voltage ranges between -8 V and +8 V to ensure safe operation. Dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

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